Micron Technology Inc.
Obrázek může být reprezentace.
Viz Specifikace pro podrobnosti o produktu.
M28W320HSB70ZA6F TR

M28W320HSB70ZA6F TR

Product Overview

Category

The M28W320HSB70ZA6F TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

  • Non-volatile: The M28W320HSB70ZA6F TR retains stored data even when power is turned off.
  • High capacity: This device has a storage capacity of 32 megabits (4 megabytes).
  • High-speed operation: It offers fast read and write speeds, enabling efficient data access.
  • Low power consumption: The M28W320HSB70ZA6F TR is designed to consume minimal power during operation.
  • Durable: It can withstand a wide range of environmental conditions, ensuring reliable performance.

Package and Quantity

The M28W320HSB70ZA6F TR is available in a surface-mount package. Each package contains one unit of the device.

Specifications

  • Storage Capacity: 32 megabits (4 megabytes)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Up to 20 years
  • Erase/Program Cycles: 100,000 cycles

Pin Configuration

The M28W320HSB70ZA6F TR has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. DQ0
  35. DQ1
  36. DQ2
  37. DQ3
  38. DQ4
  39. DQ5
  40. DQ6
  41. DQ7
  42. WE#
  43. CE#
  44. OE#
  45. RP#
  46. RY/BY#
  47. VSS
  48. NC

Functional Features

  • Fast Read/Write Operations: The M28W320HSB70ZA6F TR offers high-speed data access, allowing for efficient read and write operations.
  • Sector Erase Capability: It supports sector erase functionality, enabling selective erasure of specific memory sectors.
  • Write Protection: The device includes write protection features to prevent accidental modification or deletion of stored data.
  • Embedded Algorithms: The M28W320HSB70ZA6F TR incorporates advanced algorithms for error correction and data integrity.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast read and write speeds
  • Low power consumption
  • Durable design
  • Reliable performance in various environmental conditions

Disadvantages

  • Limited erase/program cycles (100,000 cycles)
  • Requires an external power supply

Working Principles

The M28W320HSB70ZA6F TR utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and electrically isolated gates to store binary information. The device operates by applying appropriate voltage levels to the control pins, allowing data to be read from or written to specific memory locations.

Detailed Application Field Plans

The M28W320HSB70ZA6F TR is widely used in various applications, including: - Computer systems - Mobile devices - Automotive electronics - Industrial control systems - Consumer electronics

Alternative Models

  1. M28W320FSB70ZA6E TR
  2. M28W320EB70N6F TR
  3. M28W320CT70N6F TR
  4. M28W320CB70N6F TR
  5. M28W320AT70N6F TR

These alternative models offer similar specifications and functionality to the M28W320HSB70ZA6F TR, providing options for different application requirements.

Word count: 525 words

Seznam 10 běžných otázek a odpovědí souvisejících s aplikací M28W320HSB70ZA6F TR v technických řešeních

Sure! Here are 10 common questions and answers related to the application of M28W320HSB70ZA6F TR in technical solutions:

  1. Q: What is the capacity of the M28W320HSB70ZA6F TR flash memory? A: The M28W320HSB70ZA6F TR has a capacity of 32 megabits (4 megabytes).

  2. Q: What is the operating voltage range for this flash memory? A: The operating voltage range for the M28W320HSB70ZA6F TR is typically between 2.7V and 3.6V.

  3. Q: Can I use this flash memory in industrial applications? A: Yes, the M28W320HSB70ZA6F TR is suitable for industrial applications due to its wide temperature range and reliability.

  4. Q: Does this flash memory support high-speed data transfers? A: Yes, the M28W320HSB70ZA6F TR supports high-speed data transfers with a maximum clock frequency of 70 MHz.

  5. Q: Is this flash memory compatible with SPI interface? A: Yes, the M28W320HSB70ZA6F TR uses the Serial Peripheral Interface (SPI) for communication with the host system.

  6. Q: Can I perform in-system programming on this flash memory? A: Yes, the M28W320HSB70ZA6F TR supports in-system programming, allowing you to update the firmware without removing the chip.

  7. Q: What is the typical endurance of this flash memory? A: The M28W320HSB70ZA6F TR has a typical endurance of 100,000 program/erase cycles per sector.

  8. Q: Does this flash memory have built-in security features? A: Yes, the M28W320HSB70ZA6F TR offers hardware protection features like a write-protection pin and software protection mechanisms.

  9. Q: Can I use this flash memory in battery-powered devices? A: Yes, the M28W320HSB70ZA6F TR is designed to be power-efficient, making it suitable for battery-powered applications.

  10. Q: Is there any support available for integrating this flash memory into my design? A: Yes, the manufacturer provides technical documentation, application notes, and customer support to assist with integration and troubleshooting.

Please note that these answers are general and may vary depending on the specific requirements and implementation of the M28W320HSB70ZA6F TR in your technical solution.