SST39WF1601-70-4I-MBQE-T

Product Overview

Category

The SST39WF1601-70-4I-MBQE-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The SST39WF1601-70-4I-MBQE-T retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 16 megabits (2 megabytes).
• Fast access time: With a read access time of 70 nanoseconds, it ensures quick retrieval of stored data.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The SST39WF1601-70-4I-MBQE-T is available in a compact surface-mount package. It is commonly packaged in a 48-pin TSOP (Thin Small Outline Package).

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The SST39WF1601-70-4I-MBQE-T is typically supplied in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Flash
• Capacity: 16 Megabits (2 Megabytes)
• Interface: Parallel
• Access Time: 70 ns
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-pin TSOP

Detailed Pin Configuration

The SST39WF1601-70-4I-MBQE-T has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. DQ0
27. DQ1
28. DQ2
29. DQ3
30. DQ4
31. DQ5
32. DQ6
33. DQ7
34. WE#
35. CE#
36. OE#
37. RP#
38. RY/BY#
39. RESET#
40. VSS
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Erase and Program Operations: The SST39WF1601-70-4I-MBQE-T supports both sector erase and byte program operations, allowing flexible data manipulation.
• Write Protection: It provides write protection features to prevent accidental modification or erasure of stored data.
• Sector Lockdown: This feature allows specific sectors of the memory to be locked, ensuring data integrity and security.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable non-volatile memory
• Flexible erase and program operations

Disadvantages

• Limited compatibility with certain older systems that do not support parallel interfaces
• Relatively higher cost compared to some alternative memory technologies

Working Principles

The SST39WF1601-70-4I-MBQE-T utilizes flash memory technology, which is based on the principle of storing data in floating gate transistors. The device uses electrical charges to represent binary data (0s and 1s) and can retain this data even when power is removed.

Detailed Application Field Plans

The SST39WF1601-70-4I-MBQE-T finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Embedded systems and microcontrollers - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the SST39WF1601-70-4I-MBQE-T include: - AT45DB161E by Adesto Technologies - S25FL116K by Cypress Semiconductor - W25Q16JV by Winbond Electronics

These alternative models provide comparable storage capacity, access time, and interface compatibility, making them suitable replacements for the SST