SST39VF512-70-4I-NHE

Product Overview

Category

The SST39VF512-70-4I-NHE belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The SST39VF512-70-4I-NHE retains stored data even when power is disconnected.
• High capacity: With a capacity of 512 megabits (64 megabytes), it offers ample storage space.
• Fast access time: The device provides quick read and write operations, ensuring efficient data handling.
• Low power consumption: It is designed to minimize power usage, making it suitable for battery-powered devices.

Package

The SST39VF512-70-4I-NHE is available in a compact and durable package, which ensures protection against physical damage and environmental factors.

Essence

The essence of this product lies in its ability to store and retrieve data reliably, while offering high capacity and fast access times.

Packaging/Quantity

The SST39VF512-70-4I-NHE is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but commonly ranges from 25 to 100 units.

Specifications

• Model: SST39VF512-70-4I-NHE
• Capacity: 512 megabits (64 megabytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Interface: Parallel
• Temperature Range: -40°C to +85°C
• Package Type: 48-pin TSOP

Detailed Pin Configuration

The SST39VF512-70-4I-NHE features a 48-pin TSOP package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. WE#
27. CE#
28. OE#
29. RP#
30. BYTE#
31. RY/BY#
32. RESET#
33. VSS
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• Fast Read and Write Operations: The SST39VF512-70-4I-NHE offers high-speed data access, enabling efficient read and write operations.
• Sector Erase Capability: It supports sector-based erasure, allowing selective removal of data for enhanced flexibility.
• Built-in Error Correction: The device incorporates error correction mechanisms to ensure data integrity and reliability.
• Software and Hardware Protection: The product includes features that protect against unauthorized access and accidental modifications.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access times
• Low power consumption
• Reliable data retention
• Sector erase capability

Disadvantages

• Limited compatibility with certain older systems
• Higher cost compared to some alternative models

Working Principles

The SST39VF512-70-4I-NHE utilizes flash memory technology, which stores data in electrically isolated cells. These cells can be programmed and erased using electrical signals. When reading data, the device retrieves the stored information by detecting the electrical state of each cell.

Detailed Application Field Plans

The SST39VF512-70-4I-NHE finds applications in various fields, including: 1. Computer systems 2. Mobile devices 3. Automotive electronics 4. Industrial control systems 5. Consumer electronics

Detailed and Complete Alternative Models

1. AT45DB642D-TU: Manufactured by Adesto Technologies, this flash memory device offers similar capacity and features.
2. MX25L6406EM2I-12G: Produced by Macronix, this alternative model provides comparable specifications and performance.
3. W25Q64JVSSIQ: Manufactured by Winbond, this flash memory chip is a suitable alternative with similar characteristics.

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, the SST39VF