SST39VF040-70-4C-NHE-T

Product Overview

Category

The SST39VF040-70-4C-NHE-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The SST39VF040-70-4C-NHE-T retains stored data even when power is removed.
• High capacity: It has a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: The device offers a fast access time of 70 nanoseconds.
• Low power consumption: The SST39VF040-70-4C-NHE-T operates on low power, making it suitable for battery-powered devices.

Package

The SST39VF040-70-4C-NHE-T is available in a compact surface mount package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The SST39VF040-70-4C-NHE-T is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory Type: Flash
• Memory Size: 4 Megabits (512 Kilobytes)
• Access Time: 70 Nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The SST39VF040-70-4C-NHE-T has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data inputs/outputs
4. CE: Chip enable
5. OE: Output enable
6. WE: Write enable
7. RESET: Reset signal
8. WP: Write protect
9. RP: Ready/Busy status
10. VSS: Ground

Functional Features

• Erase and Program Operations: The SST39VF040-70-4C-NHE-T supports both sector erase and byte program operations.
• Sector Protection: It provides sector protection to prevent accidental erasure or modification of critical data.
• High Reliability: This product offers high endurance and data retention, ensuring reliable performance over time.
• Low Power Consumption: The low power consumption of the SST39VF040-70-4C-NHE-T makes it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time allows for quick data retrieval.
• Low power consumption extends battery life in portable devices.

Disadvantages

• Limited write endurance compared to other types of memory.
• Higher cost per bit compared to some alternative memory technologies.

Working Principles

The SST39VF040-70-4C-NHE-T utilizes flash memory technology to store data. It employs a combination of floating-gate transistors and charge storage to retain information even when power is removed. The device can be erased and programmed using specific voltage levels and control signals.

Detailed Application Field Plans

The SST39VF040-70-4C-NHE-T finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV040B: Manufactured by Atmel, this flash memory device offers similar specifications and features as the SST39VF040-70-4C-NHE-T.
2. M29F040B: Produced by STMicroelectronics, this flash memory chip provides comparable performance and functionality to the SST39VF040-70-4C-NHE-T.
3. W27C040: Manufactured by Winbond, this flash memory IC is an alternative option with similar characteristics to the SST39VF040-70-4C-NHE-T.

These alternative models can be considered based on specific requirements and availability in the market.

In conclusion, the SST39VF040-70-4C-NHE-T is a non-volatile memory device that offers high capacity, fast access time, and low power consumption. It finds application in various electronic systems and has alternative models available in the market.