SST39VF010-70-4I-NHE-T

Product Overview

Category

The SST39VF010-70-4I-NHE-T belongs to the category of non-volatile memory devices.

Use

This product is commonly used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The SST39VF010-70-4I-NHE-T retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It operates at a speed of 70 nanoseconds, allowing for quick data retrieval.
• Low power consumption: The SST39VF010-70-4I-NHE-T is designed to minimize power usage.
• Wide temperature range: It can operate reliably in temperatures ranging from -40°C to 85°C.

Package

The SST39VF010-70-4I-NHE-T is available in a compact surface-mount package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The SST39VF010-70-4I-NHE-T is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory Type: Flash
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to 85°C
• Access Time: 70 ns
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 32

Detailed Pin Configuration

The SST39VF010-70-4I-NHE-T has a total of 32 pins. Here is the detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VSS - Ground
10. DQ0 - Data Input/Output
11. DQ1 - Data Input/Output
12. DQ2 - Data Input/Output
13. DQ3 - Data Input/Output
14. DQ4 - Data Input/Output
15. DQ5 - Data Input/Output
16. DQ6 - Data Input/Output
17. DQ7 - Data Input/Output
18. WE# - Write Enable
19. CE# - Chip Enable
20. OE# - Output Enable
21. RP# - Reset/Protection
22. VCC - Power Supply
23. NC - No Connection
24. NC - No Connection
25. NC - No Connection
26. NC - No Connection
27. NC - No Connection
28. NC - No Connection
29. NC - No Connection
30. NC - No Connection
31. NC - No Connection
32. NC - No Connection

Functional Features

• Fast Read and Write Operations: The SST39VF010-70-4I-NHE-T offers high-speed data access, allowing for efficient read and write operations.
• Sector Erase Capability: This device supports sector erase operations, enabling selective erasure of specific memory sectors.
• Built-in Protection Mechanisms: The SST39VF010-70-4I-NHE-T incorporates various protection features to prevent accidental data corruption or loss.
• Low Power Consumption: It is designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time allows for quick data retrieval.
• Wide temperature range enables reliable operation in different environments.
• Low power consumption prolongs battery life.

Disadvantages

• Limited storage capacity compared to higher-capacity memory devices.
• Parallel interface may not be suitable for all applications.
• Higher cost per bit compared to some other memory technologies.

Working Principles

The SST39VF010-70-4I-NHE-T utilizes flash memory technology to store and retrieve data. It employs a parallel interface for communication with the host system. The device operates by applying appropriate voltage levels to the address, data, and control pins to perform read, write, and erase operations. The non-volatile nature of flash memory ensures that stored data remains intact even when power is removed.

Detailed Application Field Plans

The SST39VF010-70-4I-NHE-T finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics