SST39VF010-70-4C-B3KE

Product Overview

Category

The SST39VF010-70-4C-B3KE belongs to the category of non-volatile memory devices.

Use

This product is commonly used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The SST39VF010-70-4C-B3KE retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: With a speed rating of 70 nanoseconds, it allows for quick data retrieval.
• Low power consumption: The SST39VF010-70-4C-B3KE operates at low power levels, making it suitable for battery-powered devices.

Package

The SST39VF010-70-4C-B3KE is available in a standard 32-pin plastic package.

Essence

This product serves as a reliable and efficient means of data storage in various electronic applications.

Packaging/Quantity

The SST39VF010-70-4C-B3KE is typically packaged in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Suspend & Resume Support: Yes
• Data Retention: 20 years
• Endurance: 100,000 erase/write cycles

Detailed Pin Configuration

The SST39VF010-70-4C-B3KE features a 32-pin configuration with the following pin assignments:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VSS - Ground
10. DQ0 - Data Input/Output
11. DQ1 - Data Input/Output
12. DQ2 - Data Input/Output
13. DQ3 - Data Input/Output
14. DQ4 - Data Input/Output
15. DQ5 - Data Input/Output
16. DQ6 - Data Input/Output
17. DQ7 - Data Input/Output
18. WE# - Write Enable
19. CE# - Chip Enable
20. OE# - Output Enable
21. RP# - Reset/Protection
22. VCC - Power Supply
23. NC - No Connection
24. NC - No Connection
25. NC - No Connection
26. NC - No Connection
27. NC - No Connection
28. NC - No Connection
29. NC - No Connection
30. NC - No Connection
31. NC - No Connection
32. NC - No Connection

Functional Features

• Fast Erase and Program Operations: The SST39VF010-70-4C-B3KE supports rapid erase and program operations, allowing for efficient data manipulation.
• Sector Architecture: The memory is divided into multiple sectors, enabling selective erasure and programming of specific sections.
• Hardware Protection: The RP# pin provides protection against accidental write or erase operations.
• Suspend & Resume Support: This feature allows the interruption and resumption of erase or program operations.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time enables quick data retrieval.
• Low power consumption extends battery life in portable devices.

Disadvantages

• Limited endurance with a maximum of 100,000 erase/write cycles.
• Relatively higher cost compared to other memory technologies.

Working Principles

The SST39VF010-70-4C-B3KE utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and charge trapping mechanisms to retain information even when power is removed. The device operates by applying specific voltage levels to the address and control pins, allowing for read, write, and erase operations.

Detailed Application Field Plans

The SST39VF010-70-4C-B3KE finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT29C010A-12PC - Atmel Corporation
2. M29F010B-90N1 - STMicroelectronics
3. W27C010-