SST39SF010A-55-4I-NHE

Product Overview

Category

The SST39SF010A-55-4I-NHE belongs to the category of non-volatile memory devices.

Use

This product is commonly used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The SST39SF010A-55-4I-NHE retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It offers a fast access time of 55 nanoseconds.
• Low power consumption: The SST39SF010A-55-4I-NHE operates on low power, making it suitable for battery-powered devices.

Package

The SST39SF010A-55-4I-NHE is available in a standard integrated circuit package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The SST39SF010A-55-4I-NHE is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 100 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The SST39SF010A-55-4I-NHE has a total of 32 pins. Here is the detailed pin configuration:

1. VCC - Power supply voltage
2. A0-A16 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. CE - Chip enable
5. OE - Output enable
6. WE - Write enable
7. RP - Reset/ready pin
8. WP - Write protect
9. VSS - Ground

Functional Features

• Fast read and write operations
• Sector erase capability for efficient memory management
• Automatic program and erase algorithms
• Hardware and software data protection features
• Low power consumption during standby mode

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even without power
• High storage capacity for various applications
• Fast access time allows for quick data retrieval
• Low power consumption extends battery life in portable devices

Disadvantages

• Limited endurance with a maximum of 10,000 erase/write cycles
• Relatively higher cost compared to other types of memory

Working Principles

The SST39SF010A-55-4I-NHE utilizes flash memory technology to store data. It consists of floating-gate transistors that can be electrically programmed and erased. When data is written, charges are trapped in the floating gate, altering the transistor's threshold voltage. This change in voltage determines whether the transistor represents a "0" or a "1". Reading the stored data involves measuring the threshold voltage of each transistor.

Detailed Application Field Plans

The SST39SF010A-55-4I-NHE finds applications in various electronic systems, including: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. SST39VF010-70-4C-WH: Similar to the SST39SF010A-55-4I-NHE but operates at a higher voltage and offers faster access time.
2. AT29C010A-12PC: A compatible alternative from Atmel with a similar capacity and operating characteristics.
3. M29F010B-45K1: A flash memory device from STMicroelectronics with comparable specifications.

These alternative models can be considered based on specific application requirements and availability.

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