AT93C66AW-10SI-1.8

Product Overview

Category

AT93C66AW-10SI-1.8 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Electrically erasable: The AT93C66AW-10SI-1.8 can be erased and reprogrammed electronically, making it convenient for data storage.
• Non-volatile: The stored data remains intact even when power is removed.
• High density: This chip offers a storage capacity of 4 kilobits (512 bytes).
• Low power consumption: It operates at a low voltage of 1.8V, reducing energy consumption.
• Small package size: The AT93C66AW-10SI-1.8 comes in a compact SOIC-8 package.

Packaging/Quantity

The AT93C66AW-10SI-1.8 is typically packaged in reels or tubes, with each reel containing 2,500 units.

Specifications

• Operating voltage: 1.8V
• Storage capacity: 4 kilobits (512 bytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating temperature range: -40°C to +85°C
• Data retention: 100 years
• Endurance: 1 million write cycles

Detailed Pin Configuration

The AT93C66AW-10SI-1.8 has eight pins arranged as follows:

┌───┬───┐ │ 1 │ 8 │ │ │ │ └───┴───┘

1. Chip Select (/CS): Enables the chip for communication.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Data Input (DI): Receives data to be written into the memory.
4. Data Output (DO): Outputs data read from the memory.
5. Write Enable (/W): Controls write operations.
6. VCC: Power supply voltage (1.8V).
7. Ground (GND): Common ground reference.
8. Not Connected (NC): Unused pin.

Functional Features

• Byte-level Read/Write: The AT93C66AW-10SI-1.8 allows individual bytes to be read from or written to the memory.
• Sequential Read: It supports sequential reading of multiple bytes, enabling efficient data retrieval.
• Software Protection: This chip provides software protection mechanisms to prevent unauthorized access to stored data.
• Hardware Write Protection: A write protection mechanism is available to safeguard against accidental overwriting of data.

Advantages and Disadvantages

Advantages

• Compact size and low power consumption make it suitable for portable devices.
• High data retention and endurance ensure reliable long-term storage.
• Easy integration with microcontrollers and other electronic systems.
• Cost-effective solution for non-volatile memory requirements.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write speeds compared to volatile memory types.
• Vulnerable to electromagnetic interference (EMI) due to its small size.

Working Principles

The AT93C66AW-10SI-1.8 utilizes EEPROM technology, which allows for electrical erasure and reprogramming of data. It stores information in a grid of memory cells that can be individually accessed and modified. When data needs to be written, an electrical charge is applied to specific memory cells, altering their state. Reading data involves detecting the state of each memory cell and converting it back into usable information.

Detailed Application Field Plans

The AT93C66AW-10SI-1.8 finds applications in various fields, including:

1. Automotive: Used for storing configuration data, firmware updates, and vehicle-specific settings.
2. Industrial Control Systems: Employed for storing calibration data, device parameters, and system configurations.
3. Consumer Electronics: Utilized in devices like smart TVs, set-top boxes, and gaming consoles for storing user preferences and settings.
4. Medical Devices: Used for storing patient data, device configurations, and firmware updates.
5. Internet of Things (IoT): Integrated into IoT devices for storing sensor data, network configurations, and firmware updates.

Detailed and Complete Alternative Models

1. AT93C46AW-10SU-2.7: Similar to the AT93C66AW-10SI-1.8 but with a smaller storage capacity of 2 kilobits.
2. AT93C86A-10SI-2.5: Offers a higher storage capacity of 16 kilobits and operates at a voltage of 2.5V.

These alternative models provide options with varying storage capacities