AT49LV040-12JC

Product Overview

Category

AT49LV040-12JC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 4 megabits (512 kilobytes).
• Low power consumption: Operates on low voltage.
• Fast access time: 120 nanoseconds.

Package

AT49LV040-12JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT49LV040-12JC lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49LV040-12JC chips.

Specifications

• Memory Type: Flash EEPROM
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 120 ns
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

1. A16
2. A15
3. A14
4. A13
5. A12
6. A11
7. A10
8. A9
9. A8
10. VCC
11. A7
12. A6
13. A5
14. A4
15. A3
16. A2
17. A1
18. A0
19. OE#
20. CE#
21. WE#
22. I/O0
23. I/O1
24. I/O2
25. I/O3
26. I/O4
27. I/O5
28. I/O6
29. I/O7
30. GND
31. NC
32. WP#

Functional Features

• Easy integration: Compatible with standard microcontrollers and interface protocols.
• High-speed data transfer: Supports fast read and write operations.
• Flexible write protection: Allows individual sectors to be write-protected.
• Sector erase capability: Enables efficient memory management.

Advantages

• Non-volatile nature ensures data integrity during power interruptions.
• High storage capacity accommodates a wide range of applications.
• Low power consumption prolongs battery life in portable devices.
• Fast access time enhances system performance.

Disadvantages

• Limited endurance: The number of erase/program cycles is finite.
• Relatively higher cost compared to volatile memory alternatives.
• Susceptible to physical damage from electrostatic discharge (ESD).

Working Principles

AT49LV040-12JC utilizes flash EEPROM technology to store data. It employs a combination of floating gate transistors and control circuitry to enable both reading and writing of data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior and storing the desired information. During read operations, the stored charges are detected, allowing retrieval of the stored data.

Detailed Application Field Plans

AT49LV040-12JC finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV040-12TC: Similar specifications, available in a different package (TSOP).
2. AT45DB041D: Serial interface flash memory with similar capacity and features.
3. AM29F040B: Alternative flash memory device with comparable specifications.

These alternative models offer similar functionality and can be considered as substitutes for AT49LV040-12JC in different applications.

In conclusion, AT49LV040-12JC is a non-volatile memory device that provides reliable data storage for electronic systems. With its high capacity, low power consumption, and fast access time, it offers advantages in various application fields. However, limitations such as limited endurance and susceptibility to ESD should be taken into consideration. Alternative models are available to suit specific requirements.