AT49LV002T-70VC

Product Overview

Category

AT49LV002T-70VC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The AT49LV002T-70VC retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: The AT49LV002T-70VC operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49LV002T-70VC is available in a 32-pin TSOP (Thin Small Outline Package) form factor.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49LV002T-70VC is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Write Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49LV002T-70VC features a 32-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VSS (Ground)
10. CE (Chip Enable)
11. OE (Output Enable)
12. WE (Write Enable)
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. VCC (Power)
22. NC (No Connection)
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Byte-wide access: The AT49LV002T-70VC allows individual bytes to be read or written.
• Sector erase capability: It supports sector-based erasure, allowing for efficient memory management.
• Automatic sleep mode: This feature helps conserve power when the device is not in use.
• Hardware and software protection: The AT49LV002T-70VC offers various protection mechanisms to prevent unauthorized access or accidental modification of stored data.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity for a wide range of applications.
• Fast access time enables quick retrieval of information.
• Low power consumption extends battery life in portable devices.

Disadvantages

• Limited erase/write endurance compared to some other non-volatile memory technologies.
• Relatively higher cost per bit compared to certain alternative memory options.

Working Principles

The AT49LV002T-70VC utilizes flash EEPROM technology to store digital information. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cell, altering its state. To read the stored data, the cell's state is detected by sensing the electrical current flowing through it. This allows for non-volatile storage and retrieval of information.

Detailed Application Field Plans

The AT49LV002T-70VC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV002T-70VC: Similar to the AT49LV002T-70VC, but with a wider operating voltage range.
2. AT45DB021D-SU: A serial flash memory device with similar capacity and characteristics.
3. W25Q16JVSSIQ: Another flash EEPROM device with higher capacity and faster access time.

These alternative models offer similar functionality and can be considered as substitutes for the AT49LV002T-70VC depending on specific requirements and compatibility.

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