AT49LV002T-12VC

Product Overview

Category

AT49LV002T-12VC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49LV002T-12VC retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 2 megabits (256 kilobytes).
• Low power consumption: The AT49LV002T-12VC operates on low power, making it suitable for battery-powered devices.
• Fast access time: With a maximum access time of 120 nanoseconds, this memory device provides quick data retrieval.

Package

The AT49LV002T-12VC is available in a 32-pin TSOP (Thin Small Outline Package) format.

Essence

The essence of the AT49LV002T-12VC lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49LV002T-12VC devices. The exact quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49LV002T-12VC features a 32-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VSS (Ground)
10. CE (Chip Enable)
11. OE (Output Enable)
12. WE (Write Enable)
13. NC (No Connection)
14. DQ0
15. DQ1
16. DQ2
17. DQ3
18. DQ4
19. DQ5
20. DQ6
21. DQ7
22. VCC (Power Supply)
23. RESET#
24. RP#
25. BYTE#
26. VPP (Programming Voltage)
27. NC (No Connection)
28. NC (No Connection)
29. NC (No Connection)
30. NC (No Connection)
31. NC (No Connection)
32. NC (No Connection)

Functional Features

• Chip Enable (CE): Activates the device for read or write operations.
• Output Enable (OE): Enables the outputs for data retrieval.
• Write Enable (WE): Allows data to be written into the memory.
• Reset# (RESET): Resets the device to its initial state.
• Byte# (BYTE): Selects byte or word mode for read and write operations.
• Programming Voltage (VPP): Provides the necessary voltage for programming the memory.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data is retained even without power.
• High capacity: Offers ample storage space for various applications.
• Low power consumption: Suitable for battery-powered devices.
• Fast access time: Allows for quick data retrieval.

Disadvantages

• Limited endurance: The erase/program cycle endurance is limited to 10,000 cycles.
• Requires external programming voltage: VPP needs to be supplied externally for programming.

Working Principles

The AT49LV002T-12VC utilizes flash EEPROM technology to store and retrieve data. It employs a combination of floating gate transistors and control circuitry to achieve non-volatile storage. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be erased by applying a higher voltage during the programming process.

Detailed Application Field Plans

The AT49LV002T-12VC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV002T-12VC: Similar to AT49LV002T-12VC, but with a wider operating temperature range (-55°C to +125°C).
2. AT49LV004T-12VC: Doubles the storage capacity to 4 megabits (512 kilobytes) while maintaining similar specifications.
3. AT49LV008T-12VC: Offers 8 megabits (1 megabyte) of storage capacity with comparable characteristics.

These alternative models provide options with varying capacities and temperature ranges, allowing for flexibility in different application scenarios.

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