AT49F512-70JC

Product Overview

Category

AT49F512-70JC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49F512-70JC retains stored data even when power is removed.
• High capacity: It has a storage capacity of 512 kilobits (64 kilobytes).
• Fast access time: The device offers a fast access time of 70 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49F512-70JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT49F512-70JC is typically packaged in reels or tubes, with a quantity of 100 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 64K x 8 bits
• Supply Voltage: 5V ±10%
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT49F512-70JC has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. BYTE#
14. OE#
15. CE#
16. WE#
17. I/O0
18. I/O1
19. I/O2
20. I/O3
21. I/O4
22. I/O5
23. I/O6
24. I/O7
25. VCC
26. GND
27. NC
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Easy integration: The AT49F512-70JC can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: The device supports a standard parallel interface for seamless communication with the host system.
• Sector erase capability: The AT49F512-70JC allows for erasing data in sectors, providing flexibility in managing memory space.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing substantial amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited erase/program cycle endurance may require careful management in certain applications.
• The PLCC package may not be compatible with all system designs.

Working Principles

The AT49F512-70JC utilizes flash EEPROM technology to store data. It consists of an array of floating-gate transistors that can be electrically programmed and erased. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be removed during the erase process, allowing new data to be written. The stored data can be accessed by applying appropriate voltages to the control pins.

Detailed Application Field Plans

The AT49F512-70JC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

• AT49F010-70JC
• AT49F020-70JC
• AT49F040-70JC
• AT49F080-70JC
• AT49F1600-70JC

These alternative models offer similar functionality and characteristics, providing options for different memory capacity requirements.

In conclusion, the AT49F512-70JC is a non-volatile memory device with high capacity, fast access time, and low power consumption. It is widely used in various electronic applications and offers reliable data storage. While it has certain limitations, such as erase/program cycle endurance, it provides valuable features for efficient data management.