AT49F1025-70VI

Product Overview

Category

AT49F1025-70VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: The AT49F1025-70VI has a storage capacity of 1,048,576 bits (128 kilobytes).
• Fast access time: It operates at a speed of 70 nanoseconds.
• Low power consumption: Consumes minimal power during operation.
• Reliable: Offers high endurance and data retention capabilities.

Package

The AT49F1025-70VI is available in a standard 32-pin plastic package.

Essence

This memory device is essential for storing critical data in various electronic applications.

Packaging/Quantity

The AT49F1025-70VI is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT49F1025-70VI features a 32-pin configuration with the following pin assignments:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. A15
14. A13
15. A8
16. A9
17. A11
18. A10
19. OE#
20. CE#
21. WE#
22. I/O0
23. I/O1
24. I/O2
25. I/O3
26. I/O4
27. I/O5
28. I/O6
29. I/O7
30. RY/BY#
31. NC
32. GND

Functional Features

• Easy integration: The AT49F1025-70VI can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: The parallel interface allows for easy communication with microcontrollers and other devices.
• Sector erase capability: Enables selective erasure of specific memory sectors.
• Write protection: Provides write protection for critical data.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time enhances system performance.
• Low power consumption prolongs battery life.
• Reliable endurance and data retention capabilities.

Disadvantages

• Limited erase/program cycle endurance compared to some newer memory technologies.
• Parallel interface may require additional pins and complexity in system design.

Working Principles

The AT49F1025-70VI utilizes flash EEPROM technology to store and retrieve data. It employs a combination of floating gate transistors and charge trapping mechanisms to store electrical charges representing binary data. The stored charges can be erased or programmed using specific voltage levels applied to the memory cells.

Detailed Application Field Plans

The AT49F1025-70VI finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to the AT49F1025-70VI include: - AT49F1024-70VI - AT49F1024A-70VI - AT49F1024A-90VI - AT49F1024A-12VI

These models offer similar functionality and characteristics, providing options for different system requirements.

Word count: 550 words