AT49F1025-70JC

Product Overview

Category

AT49F1025-70JC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT49F1025-70JC has a storage capacity of 1,048,576 bits (128 kilobytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT49F1025-70JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F1025-70JC is typically packaged in reels or tubes, with a quantity of 25 pieces per tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F1025-70JC has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. GND
27. VCC
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Easy interface: The AT49F1025-70JC supports a standard parallel interface, making it compatible with various microcontrollers and systems.
• High-speed operation: With an access time of 70 ns, this device enables fast read and write operations.
• Sector erase capability: It allows for erasing data in sectors, providing flexibility in managing memory space.
• Write protection: The device features hardware and software write protection mechanisms to prevent accidental data modification.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of information.
• Fast access time facilitates quick data retrieval.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited endurance: The AT49F1025-70JC has a maximum erase/program cycle endurance of 10,000 cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49F1025-70JC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, the memory cells are charged or discharged to represent binary values. Reading the stored data involves sensing the voltage levels in the memory cells.

Detailed Application Field Plans

The AT49F1025-70JC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

• AT49F1024: Similar to AT49F1025-70JC but with a capacity of 1,048,576 bits (128 kilobytes).
• AT49F2048: Double the capacity of AT49F1025-70JC, offering 2,097,152 bits (256 kilobytes).
• AT49F4096: Four times the capacity of AT49F1025-70JC, providing 4,194,304 bits (512 kilobytes).

These alternative models offer different storage capacities to suit specific application requirements.

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