AT49F1025-55VI

Product Overview

Category

AT49F1025-55VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: The AT49F1025-55VI has a storage capacity of 1,048,576 bits (128K x 8).
• Fast access time: It offers a fast access time of 55 nanoseconds.
• Low power consumption: Designed to operate with low power requirements.
• Reliable: Provides high endurance and data retention capabilities.

Package

The AT49F1025-55VI is available in a standard 32-pin plastic DIP (Dual In-line Package) or a 32-pin TSOP (Thin Small Outline Package).

Essence

The essence of AT49F1025-55VI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F1025-55VI is typically packaged in tubes or trays, with quantities varying based on customer requirements.

Specifications

• Memory Size: 1,048,576 bits (128K x 8)
• Access Time: 55 nanoseconds
• Supply Voltage: 5V ±10%
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Pin Configuration

The AT49F1025-55VI has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. NC
32. NC

Functional Features

• Easy integration: The AT49F1025-55VI can be easily integrated into various electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: Compatible with a wide range of microcontrollers and digital systems.
• Sector erase capability: Allows for selective erasure of memory sectors, enhancing flexibility.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.
• High endurance allows for frequent write operations without compromising reliability.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Erase and write cycles are finite, which may restrict certain applications requiring extensive data modification.

Working Principles

The AT49F1025-55VI utilizes Flash memory technology to store data. It consists of floating-gate transistors that can retain charge, representing binary data. When data is written, the charge is trapped in the floating gate, and when data is read, the charge is sensed to determine the stored value. The memory cells are organized into sectors, allowing for selective erasure and modification of data.

Detailed Application Field Plans

The AT49F1025-55VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV1025-55VI: Similar to AT49F1025-55VI, but with a different programming algorithm.
2. AT45DB1025-55VI: Offers additional features like dual-interface and data protection mechanisms.
3. AM29F1025-55VI: A compatible alternative from a different manufacturer.

These alternative models provide similar functionality and can be considered based on specific requirements and compatibility with the target system.

In conclusion, the AT49F1025-55VI is a non-volatile memory device that offers high storage capacity, fast access time, and low power consumption. It is widely used in various electronic systems and provides reliable data storage capabilities. While it has certain limitations, alternative models are available to cater to different application needs.