AT49F1024-70VI

Product Overview

Category

AT49F1024-70VI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49F1024-70VI has a storage capacity of 1,024 kilobits (128 kilobytes).
• Fast access time: It operates at a speed of 70 nanoseconds.
• Low power consumption: The device is designed to minimize power usage.
• Reliable: It offers high endurance and data retention capabilities.
• Easy integration: The AT49F1024-70VI can be easily integrated into various electronic systems.

Package

The AT49F1024-70VI is available in a standard 40-pin plastic dual in-line package (PDIP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F1024-70VI is typically packaged in reels or tubes, with a quantity of 25 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 5V ±10%
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT49F1024-70VI has a total of 40 pins. Here is the detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE - Chip Enable Input
18. OE - Output Enable Input
19. WE - Write Enable Input
20. RESET - Reset Input
21. NC - No Connection
22. VCC - Power Supply
23. DQ0 - Data Input/Output
24. DQ1 - Data Input/Output
25. DQ2 - Data Input/Output
26. DQ3 - Data Input/Output
27. DQ4 - Data Input/Output
28. DQ5 - Data Input/Output
29. DQ6 - Data Input/Output
30. DQ7 - Data Input/Output
31. VSS - Ground
32. RP - Ready/Busy Output
33. BYTE - Byte/Word Organization Input
34. VPP - Programming Voltage
35. NC - No Connection
36. NC - No Connection
37. NC - No Connection
38. NC - No Connection
39. NC - No Connection
40. NC - No Connection

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient memory management
• Hardware and software data protection mechanisms
• Low power consumption during standby mode
• Automatic sleep mode to conserve energy
• Easy integration with various microcontrollers and systems

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for storing large amounts of data.
• Fast access time allows for quick retrieval of information.
• Low power consumption helps prolong battery life in portable devices.
• Reliable and durable, with high endurance and data retention capabilities.

Disadvantages

• Limited erase/program cycle endurance compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.
• Requires specific programming voltage (VPP) for write operations.

Working Principles

The AT49F1024-70VI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into sectors, allowing for efficient management of data. When data needs to be written or erased, the appropriate voltages are applied to the control pins, enabling the desired operation. During read operations, the stored data is accessed by applying the appropriate address inputs and enabling the output pins.

Detailed Application Field Plans

The AT49F1024-70VI finds applications in various electronic systems, including but not limited to: - Embedded systems