AT49F002NT-90VI

Product Overview

Category

AT49F002NT-90VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49F002NT-90VI has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It offers a fast access time of 90 nanoseconds.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT49F002NT-90VI comes in a standard 32-pin plastic package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F002NT-90VI is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 5V
• Access Time: 90 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. NC
32. NC

Functional Features

• Easy integration: The AT49F002NT-90VI can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: The device supports a standard parallel interface for easy communication with other components.
• Sector erase capability: The memory can be erased in sectors, allowing selective data modification.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited erase/program cycle endurance may restrict the lifespan of the device.
• The 32-pin package may require additional space on the PCB compared to smaller form factors.

Working Principles

The AT49F002NT-90VI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cells, altering their state. To read the stored data, the device applies voltage to the appropriate memory cells and detects the resulting electrical signals.

Detailed Application Field Plans

The AT49F002NT-90VI finds applications in various electronic systems, including but not limited to: 1. Embedded systems 2. Consumer electronics 3. Automotive electronics 4. Industrial control systems 5. Communication devices

Detailed and Complete Alternative Models

1. AT49F002NT-70VI: Similar to the AT49F002NT-90VI, but with a slower access time of 70 ns.
2. AT49F002NT-55VI: Offers a faster access time of 55 ns compared to the AT49F002NT-90VI.
3. AT49F002NT-120VI: Provides a higher endurance of erase/program cycles (20,000 cycles) compared to the AT49F002NT-90VI.

These alternative models offer different specifications and may be suitable for specific application requirements.

In conclusion, the AT49F002NT-90VI is a non-volatile memory device that provides reliable storage for electronic systems. With its high capacity, fast access time, and low power consumption, it offers several advantages for various applications. However, its limited erase/program cycle endurance and larger package size should be considered. Alternative models with different specifications are available to cater to specific needs.