AT49F002NT-70VI

Product Overview

Category

AT49F002NT-70VI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT49F002NT-70VI has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: This device operates at low power, making it suitable for battery-powered applications.

Package

The AT49F002NT-70VI is available in a 32-pin TSOP (Thin Small Outline Package) form factor.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F002NT-70VI is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 5V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Pin Configuration

The AT49F002NT-70VI has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. A15
32. A13

Functional Features

• Easy interface: The AT49F002NT-70VI supports a standard parallel interface, making it compatible with various microcontrollers and systems.
• Sector erase capability: It allows for erasing data in sectors, enabling efficient memory management.
• Write protection: This device offers write protection features to prevent accidental modification of stored data.
• High reliability: With its non-volatile nature and endurance of 10,000 erase/program cycles, the AT49F002NT-70VI ensures long-term data retention.

Advantages and Disadvantages

Advantages

• Non-volatile storage
• High capacity
• Fast access time
• Low power consumption
• Easy integration with existing systems

Disadvantages

• Limited erase/program cycle endurance compared to some other flash memory devices
• Relatively higher cost per bit compared to traditional non-flash memory technologies

Working Principles

The AT49F002NT-70VI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, charges are trapped in the floating gate of each memory cell, representing the stored information. To read the data, the charges are sensed and interpreted as binary values.

Detailed Application Field Plans

The AT49F002NT-70VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

• AT49F002NT-55VI: Similar to the AT49F002NT-70VI, but with a faster access time of 55 ns.
• AT49F002NT-90VI: Similar to the AT49F002NT-70VI, but with a slower access time of 90 ns.
• AT49F002NT-12VI: Similar to the AT49F002NT-70VI, but with a higher supply voltage requirement of 12V.

These alternative models provide options based on specific requirements such as speed, power consumption, and voltage compatibility.

In conclusion, the AT49F002NT-70VI is a non-volatile memory device with high capacity, fast access time, and low power consumption. It offers easy integration, sector erase capability, and write protection features. While it has limitations in terms of endurance and cost per bit, it provides reliable storage for various electronic systems.