AT49F001T-70VC

Product Overview

Category

AT49F001T-70VC belongs to the category of non-volatile memory devices.

Use

This product is commonly used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49F001T-70VC has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It operates at a speed of 70 nanoseconds, allowing for quick data retrieval.
• Low power consumption: This device is designed to minimize power usage, making it suitable for battery-powered applications.

Package

The AT49F001T-70VC is available in a 32-pin TSOP (Thin Small Outline Package) form factor.

Essence

This product is an essential component for storing firmware, boot code, and other critical data in various electronic devices.

Packaging/Quantity

The AT49F001T-70VC is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 1 Megabit (128 Kilobytes)
• Access Time: 70 Nanoseconds
• Supply Voltage: 5V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin TSOP

Detailed Pin Configuration

The AT49F001T-70VC has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Easy to interface: The AT49F001T-70VC can be easily connected to microcontrollers and other digital systems.
• High reliability: This device offers robust data storage and retrieval capabilities, ensuring data integrity.
• Flexible operation: It supports both random and sequential access modes, providing versatility in various applications.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick data retrieval.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited rewrite cycles: Flash EEPROM has a finite number of erase/write cycles before degradation occurs.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49F001T-70VC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cell, altering its state. To read the stored data, the cell's state is detected by sensing the voltage level. This process allows for non-volatile data storage and retrieval.

Detailed Application Field Plans

The AT49F001T-70VC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to the AT49F001T-70VC include: - AT49F002NT-70VC - AT49F010-70VC - AT49F040-70VC - AT49F080-70VC

These models offer similar functionality and characteristics, but with different storage capacities and pin configurations.

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