AT49F001NT-12VC

Product Overview

Category

AT49F001NT-12VC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The data stored in AT49F001NT-12VC is retained even when power is removed.
• High capacity: It has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: The device offers a fast access time of 120 nanoseconds.
• Low power consumption: AT49F001NT-12VC operates on low power, making it suitable for battery-powered devices.

Package

AT49F001NT-12VC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT49F001NT-12VC lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

AT49F001NT-12VC is typically packaged in reels or tubes, with a quantity of 1000 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The pin configuration of AT49F001NT-12VC is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Byte-wide operation: AT49F001NT-12VC supports byte-level read and write operations.
• Sector erase capability: It allows for the erasure of specific sectors, enhancing flexibility in data management.
• Hardware and software protection: The device offers protection mechanisms to prevent accidental modification or erasure of data.
• Fast programming speed: AT49F001NT-12VC enables quick programming of data.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life.
• Fast access time enhances system performance.
• Sector erase capability provides efficient data management.

Disadvantages

• Limited endurance cycles compared to other non-volatile memory technologies.
• Relatively higher cost per bit compared to some alternative memory devices.

Working Principles

AT49F001NT-12VC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into sectors, allowing for selective erasure and programming. When data is written, an electrical charge is applied to the memory cells, altering their state. Reading data involves detecting the stored charge levels in the memory cells.

Detailed Application Field Plans

AT49F001NT-12VC finds application in various electronic systems, including: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to AT49F001NT-12VC include: - AT49F002NT-12VC: 2 megabit flash EEPROM with similar characteristics. - AT45DB011D-SU: 1 megabit DataFlash memory with additional features like dual-interface and extra security.

(Note: The list of alternative models can be expanded based on specific requirements and availability in the market.)

In conclusion, AT49F001NT-12VC is a non-volatile memory device that offers high capacity, fast access time, and low power consumption. Its sector erase capability and protection mechanisms make it suitable for various applications. While it has limited endurance cycles and relatively higher cost per bit, it provides reliable data storage in electronic systems.