AT49F001N-55VI

Product Overview

Category

AT49F001N-55VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick read and write operations.
• Low power consumption: Operates efficiently with minimal power usage.

Package

AT49F001N-55VI comes in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of AT49F001N-55VI lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49F001N-55VI chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Memory Size: 1 Megabit (128 Kilobytes)
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 55 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. RESET#
26. NC
27. GND
28. A8
29. A9
30. A11
31. A10
32. A13

Functional Features

• Byte-wide random access: Allows individual bytes to be read, written, or erased independently.
• Sector erase capability: Enables erasing of specific sectors rather than the entire memory.
• Hardware and software data protection: Provides mechanisms to prevent accidental modification or deletion of stored data.
• Automatic sleep mode: Reduces power consumption when the device is idle.
• Fast programming time: Facilitates quick data storage operations.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time allows for efficient data retrieval.
• Low power consumption prolongs battery life in portable devices.
• Sector erase capability enhances flexibility in data management.

Disadvantages

• Limited erase/write endurance compared to other non-volatile memory technologies.
• Relatively higher cost per bit compared to some alternative memory solutions.
• Susceptible to physical damage from electrostatic discharge (ESD) if not handled properly.

Working Principles

AT49F001N-55VI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells, with each cell capable of storing one bit of information. The data is stored by trapping electric charges within the floating gate of each memory cell. These trapped charges determine the binary state of the cell (0 or 1). The stored data can be read, modified, or erased using specific electrical signals applied to the device's pins.

Detailed Application Field Plans

AT49F001N-55VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its high storage capacity and non-volatile nature make it suitable for storing firmware, configuration data, program code, and other critical information in these applications.

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT49F001N-55VI include: - AT49BV001T: Offers a lower voltage range and extended temperature range. - AT45DB011D: Provides additional features like dual-interface and extra security measures. - SST39SF010A: Offers higher erase/write endurance and faster access times.

These alternative models can be considered based on specific application requirements and desired features.

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