AT49F001N-55PI

Product Overview

Category

AT49F001N-55PI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick read and write operations.
• Low power consumption: Operates efficiently with minimal power requirements.

Package

AT49F001N-55PI comes in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of AT49F001N-55PI lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 25 pieces per tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 55ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Easy integration: Compatible with standard microcontrollers and interface protocols.
• High-speed operation: Enables fast data transfer and access.
• Flexible write protection: Supports software and hardware-based write protection mechanisms.
• Sector erase capability: Allows selective erasure of memory sectors for efficient data management.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time improves system performance.
• Low power consumption extends battery life in portable devices.

Disadvantages

• Limited erase/write endurance compared to other non-volatile memory technologies.
• Relatively higher cost per bit compared to traditional volatile memory.

Working Principles

AT49F001N-55PI utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data by trapping electrons in a floating gate, allowing the information to be retained even when power is removed. The memory cells are organized into sectors, which can be selectively erased and written using appropriate control signals.

Detailed Application Field Plans

AT49F001N-55PI finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-55PI: 256K x 8 bits flash EEPROM with similar specifications.
2. AT49F004N-55PI: 512K x 8 bits flash EEPROM with similar specifications.
3. AT49F008N-55PI: 1M x 8 bits flash EEPROM with similar specifications.

These alternative models provide increased storage capacity while maintaining compatibility and similar performance characteristics.

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