AT49F001AN-55TU

Product Overview

Category

AT49F001AN-55TU belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick read and write operations.
• Low power consumption: Optimized for energy efficiency.
• Wide operating voltage range: Can operate within a voltage range of 2.7V to 5.5V.

Package

AT49F001AN-55TU is available in a standard 32-pin TSOP (Thin Small Outline Package).

Essence

The essence of AT49F001AN-55TU lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

This product is typically packaged in reels, with each reel containing a specific quantity of AT49F001AN-55TU chips.

Specifications

• Memory Type: Flash EEPROM
• Memory Size: 1 Megabit (128 Kilobytes)
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V - 5.5V
• Access Time: 55 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin TSOP

Detailed Pin Configuration

The AT49F001AN-55TU chip has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. RY/BY#
27. RESET#
28. RP#
29. VSS
30. A8
31. A9
32. A11

Functional Features

• Easy integration: Compatible with various microcontrollers and electronic systems.
• High-speed operation: Provides fast read and write access times.
• Sector erase capability: Allows selective erasure of specific memory sectors.
• Data protection: Supports hardware and software data protection mechanisms.
• Low power consumption: Optimized for energy-efficient operation.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity suitable for a wide range of applications.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles.
• Relatively higher cost compared to other types of memory.
• Susceptible to data corruption in case of power surges or electromagnetic interference.

Working Principles

AT49F001AN-55TU utilizes flash EEPROM technology for data storage. It consists of a grid of memory cells, each capable of storing a single bit of information. These cells are organized into sectors, allowing for efficient read, write, and erase operations. The memory cells use floating-gate transistors to trap electric charge, representing the stored data as binary values.

Detailed Application Field Plans

AT49F001AN-55TU finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT49F001AN-55TU are: - AT49BV001NT-55TU - AT45DB011D-SU - SST39SF010A-70-4C-PH

These models provide comparable features and can be considered as alternatives based on specific requirements.

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