AT49BV8192AT-90TC

Product Overview

Category

The AT49BV8192AT-90TC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV8192AT-90TC retains stored data even when power is turned off.
• High capacity: It has a storage capacity of 8192 kilobits (1 megabyte).
• Fast access time: The device offers a fast access time of 90 nanoseconds.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.

Package

The AT49BV8192AT-90TC is available in a surface-mount TSOP package.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

The AT49BV8192AT-90TC is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Flash EEPROM
• Organization: 8192 kilobits (1024 kilobytes)
• Access Time: 90 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The AT49BV8192AT-90TC has a total of 32 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. BYTE#
18. WE#
19. OE#
20. CE#
21. CLE#
22. ALE#
23. WP#
24. VCC
25. DQ0
26. DQ1
27. DQ2
28. DQ3
29. DQ4
30. DQ5
31. DQ6
32. DQ7

Functional Features

• Erase and Program Operations: The AT49BV8192AT-90TC supports both sector erase and byte program operations.
• Hardware Data Protection: It offers hardware data protection features to prevent accidental writes or erasures.
• Automatic Page Write: The device supports automatic page write for efficient programming of multiple bytes.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Reliable non-volatile memory

Disadvantages

• Limited endurance: Flash memory has a limited number of erase/write cycles before it may become unreliable.
• Higher cost compared to other types of memory

Working Principles

The AT49BV8192AT-90TC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells, where each cell can store a bit of information. The data is stored by trapping electric charges within the floating gate of each memory cell. These trapped charges determine whether the cell represents a "0" or a "1". The data can be read, erased, and programmed using specific electrical signals applied to the device's pins.

Detailed Application Field Plans

The AT49BV8192AT-90TC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV8192A-90TC: Similar to the AT49BV8192AT-90TC, but without the temperature compensation feature.
2. AT49BV8192AT-70TC: A lower-speed variant with an access time of 70 nanoseconds.
3. AT49BV8192AT-120TC: A higher-speed variant with an access time of 120 nanoseconds.

These alternative models provide options based on specific speed requirements or cost considerations.

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