AT49BV512-15JC

Product Overview

Category

AT49BV512-15JC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The AT49BV512-15JC retains stored data even when power is removed.
• High capacity: It has a storage capacity of 512 kilobits (64 kilobytes).
• Fast access time: The device offers a fast access time of 15 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49BV512-15JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic devices, ensuring data integrity even during power interruptions.

Packaging/Quantity

The AT49BV512-15JC is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Organization: 64K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49BV512-15JC features a 32-pin PLCC package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. OE#
11. CE#
12. WE#
13. BYTE#
14. NC
15. DQ0
16. DQ1
17. DQ2
18. DQ3
19. DQ4
20. DQ5
21. DQ6
22. DQ7
23. VSS
24. RP#
25. WP#
26. RESET#
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Byte-wide and word-wide operations: The AT49BV512-15JC supports both byte-level and word-level read and write operations.
• Sector erase capability: It allows for erasing specific sectors of the memory, enabling efficient data management.
• Hardware and software protection: The device offers various protection mechanisms to prevent unauthorized access or accidental modification of stored data.
• Automatic sleep mode: When not in use, the AT49BV512-15JC enters a low-power sleep mode, conserving energy.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity.
• High storage capacity for various applications.
• Fast access time allows for quick data retrieval.
• Low power consumption extends battery life.
• Sector erase capability enables efficient data management.

Disadvantages

• Limited erase/write cycle endurance compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.

Working Principles

The AT49BV512-15JC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The device uses a combination of transistors and floating gate structures to trap and release electrons, representing binary data (0s and 1s). The stored data remains intact even when power is removed, making it non-volatile.

Detailed Application Field Plans

The AT49BV512-15JC finds applications in various fields, including: 1. Microcontrollers: It provides storage for program code and data in microcontroller-based systems. 2. Embedded Systems: The device is used to store firmware, configuration settings, and other critical data in embedded systems. 3. Consumer Electronics: It serves as non-volatile memory in devices such as digital cameras, set-top boxes, and gaming consoles.

Detailed and Complete Alternative Models

Some alternative models to the AT49BV512-15JC include: - AT45DB642D: A similar flash EEPROM device with higher capacity and additional features like dual-interface and data protection. - SST39SF010A: A compatible flash memory chip with a different pin configuration but similar specifications and functionality.

In conclusion, the AT49BV512-15JC is a non-volatile memory device that offers high capacity, fast access time, and low power consumption. Its sector erase capability, hardware/software protection, and automatic sleep mode make it suitable for various applications. However, it has limited erase/write cycle endurance and relatively higher cost per bit compared to some alternatives.