AT49BV322DT-70TU-T

Product Overview

Category

AT49BV322DT-70TU-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV322DT-70TU-T retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 32 megabits (4 megabytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: The AT49BV322DT-70TU-T operates on low power, making it suitable for battery-powered devices.

Package

The AT49BV322DT-70TU-T is available in a surface-mount TSOP package.

Essence

This product is an essential component for data storage and retrieval in various electronic applications.

Packaging/Quantity

The AT49BV322DT-70TU-T is typically packaged in reels containing a specified quantity of devices. The exact packaging and quantity can vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 4M x 8
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49BV322DT-70TU-T has a total of 48 pins. Here is the detailed pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. BYTE: Byte/Word Organization Selection
7. VCC: Power Supply
8. GND: Ground

Functional Features

• Fast Read and Write Operations: The AT49BV322DT-70TU-T offers fast read and write operations, allowing for efficient data transfer.
• Sector Erase Capability: This device supports sector erase operations, enabling selective erasure of specific memory sectors.
• Data Protection: The AT49BV322DT-70TU-T includes built-in features to protect stored data from accidental modification or corruption.
• Low Power Consumption: With its low power requirements, this product is suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Non-volatile memory
• Low power consumption

Disadvantages

• Limited erase/program cycle endurance compared to some other non-volatile memory technologies
• Requires external circuitry for proper interfacing with the system

Working Principles

The AT49BV322DT-70TU-T utilizes flash memory technology for data storage. It stores information in a series of memory cells that can be electrically programmed and erased. When data needs to be written, the appropriate address is selected, and the data is stored in the corresponding memory cell. Reading data involves selecting the desired address and retrieving the stored information from the memory cell.

Detailed Application Field Plans

The AT49BV322DT-70TU-T finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to the AT49BV322DT-70TU-T include: - AT49BV322D-70TU - AT49BV322D-70CU - AT49BV322D-70CI

These models offer similar functionality and specifications, providing options for different system requirements.

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