AT49BV322DT-70TU

Product Overview

Category

AT49BV322DT-70TU belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49BV322DT-70TU has a storage capacity of 32 megabits (4 megabytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: The device operates at low power, making it suitable for battery-powered applications.

Package

The AT49BV322DT-70TU is available in a surface-mount TSOP package.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic systems.

Packaging/Quantity

The AT49BV322DT-70TU is typically packaged in reels and is available in quantities suitable for both small-scale and large-scale production.

Specifications

• Memory Type: Flash
• Memory Size: 32 Megabits (4 Megabytes)
• Access Time: 70 ns
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AT49BV322DT-70TU has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. A16
18. A17
19. A18
20. A19
21. A20
22. A21
23. A22
24. A23
25. A24
26. A25
27. A26
28. A27
29. A28
30. A29
31. A30
32. A31
33. BYTE#
34. WE#
35. CE#
36. OE#
37. RESET#
38. VCC
39. GND
40. DQ0
41. DQ1
42. DQ2
43. DQ3
44. DQ4
45. DQ5
46. DQ6
47. DQ7
48. DQ8

Functional Features

• High-speed data transfer: The AT49BV322DT-70TU supports fast data transfer rates, allowing for efficient read and write operations.
• Sector erase capability: It provides the ability to erase specific sectors of the memory, enabling flexible data management.
• Write protection: The device offers write protection features to prevent accidental modification or deletion of stored data.
• Low power consumption: The AT49BV322DT-70TU operates at low power, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Non-volatile memory
• Low power consumption

Disadvantages

• Limited endurance: Flash memory has a limited number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49BV322DT-70TU utilizes flash memory technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The data is stored in the form of electrical charges within these cells. When reading or writing data, specific voltages are applied to the memory cells to manipulate the charge levels and retrieve or modify the stored information.

Detailed Application Field Plans

The AT49BV322DT-70TU finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV322D-TU: Similar to AT49BV322DT-70TU but with a slower access time of 90 ns.
2. AT49BV322D-80TU: Similar to AT49BV322DT-70TU but with a faster access time of 80 ns.
3. AT49BV322D-55TU: Similar to AT49BV322DT-70TU but with a faster access time of 55 ns.

These alternative models provide options with different access times to suit specific application requirements.

In conclusion, the AT49BV322DT-70TU is a high-capacity non-volatile memory device