AT49BV3218T-11TI

Product Overview

Category

The AT49BV3218T-11TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The AT49BV3218T-11TI retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 32 megabits (4 megabytes).
• Fast access time: It offers a fast access time of 110 nanoseconds, allowing for quick retrieval of data.
• Low power consumption: The AT49BV3218T-11TI operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49BV3218T-11TI is available in a compact Thin Small Outline Package (TSOP) with 48 pins.

Essence

This memory device is designed to provide reliable and efficient data storage capabilities for electronic systems.

Packaging/Quantity

The AT49BV3218T-11TI is typically packaged in reels or trays, with each package containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Capacity: 32 Megabits (4 Megabytes)
• Access Time: 110 Nanoseconds
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The AT49BV3218T-11TI features a total of 48 pins, which are assigned different functions. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. BYTE#
27. WE#
28. CE#
29. OE#
30. I/O0
31. I/O1
32. I/O2
33. I/O3
34. I/O4
35. I/O5
36. I/O6
37. I/O7
38. NC
39. RY/BY#
40. RESET#
41. VSS
42. RP#
43. WP#
44. VCC
45. VCC
46. VSS
47. VSS
48. VSS

Functional Features

• Erase and Program Operations: The AT49BV3218T-11TI supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Write Protection: This device includes write protection features to prevent accidental modification or deletion of stored data.
• High Reliability: The AT49BV3218T-11TI offers high endurance and data retention capabilities, ensuring the integrity of stored information over an extended period.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data persistence even during power loss.
• High storage capacity allows for ample data storage.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited compatibility with certain systems due to its parallel interface.
• Relatively higher cost compared to other memory technologies.

Working Principles

The AT49BV3218T-11TI utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These charges represent binary information and can be read, erased, or programmed using specific electrical signals.

During read operations, the stored charges are sensed to determine the stored data. Erase operations involve removing all charges from selected memory sectors, while programming operations introduce new charges to store desired data.

Detailed Application Field Plans

The AT49BV3218T-11TI finds applications in various electronic systems that require non-volatile data storage. Some of the common application fields include:

1. Embedded Systems: This memory device is widely used in embedded systems, such as industrial control systems, automotive electronics, and IoT devices, to store critical program code and data.

2. Consumer Electronics: The AT49BV3218T-11TI is utilized in consumer electronics like smartphones, tablets, and digital cameras for storing user data, firmware, and multimedia content.

3. Computer Systems: It is employed in computer systems for BIOS storage, firmware updates