AT49BV163A-70TI

Product Overview

Category

AT49BV163A-70TI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing data in electronic systems, such as microcontrollers and embedded systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: The AT49BV163A-70TI has a storage capacity of 16 megabits (2 megabytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: Designed to operate with low power requirements.
• Reliable: Provides high endurance and data retention capabilities.

Package

The AT49BV163A-70TI is available in a standard Thin Small Outline Package (TSOP) with 48 pins.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of AT49BV163A-70TI chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 16 megabits (2 megabytes)
• Access Time: 70 nanoseconds
• Operating Voltage: 2.7V - 3.6V
• Temperature Range: -40°C to +85°C
• Interface: Parallel

Pin Configuration

The AT49BV163A-70TI has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. CE#
18. OE#
19. WE#
20. BYTE#
21. VCC
22. DQ0
23. DQ1
24. DQ2
25. DQ3
26. DQ4
27. DQ5
28. DQ6
29. DQ7
30. DQ8
31. DQ9
32. DQ10
33. DQ11
34. DQ12
35. DQ13
36. DQ14
37. DQ15
38. DQ16
39. DQ17
40. DQ18
41. DQ19
42. DQ20
43. DQ21
44. DQ22
45. DQ23
46. VSS
47. RP#
48. WP#

Functional Features

• Random access: Allows for reading and writing data at any address within the memory.
• Erase capability: Supports sector erase and chip erase operations.
• Write protection: Provides write protection to prevent accidental modification of stored data.
• Low power consumption: Designed to minimize power consumption during operation.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even in the absence of power.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: The number of erase/write cycles is finite, which may affect the lifespan of the device.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49BV163A-70TI utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and control circuitry to store and manipulate information. The data is organized into memory cells, which can be individually accessed for reading or writing operations.

Detailed Application Field Plans

The AT49BV163A-70TI finds applications in various electronic systems, including but not limited to: - Microcontrollers - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics

Alternative Models

Below are some alternative models that offer similar functionality to the AT49BV163A-70TI:

1. AT45DB161E-SSHD-T: 16 megabit DataFlash memory with Serial Peripheral Interface (SPI).
2. S29GL128S90TFI010: 128 megabit parallel flash memory with a fast access time of 90 nanoseconds.
3. MX25L1606EZNI-12G: 16 megabit serial flash memory with a low operating voltage range of 2.7V - 3.6V.

These alternative models can be considered based on specific requirements and compatibility with the target system.

In conclusion, the AT49BV163A-70TI is a non-volatile memory device with a storage