AT49BV1614-90TC

Product Overview

Category

AT49BV1614-90TC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: The AT49BV1614-90TC has a storage capacity of 16 megabits.
• Fast access time: It offers a fast access time of 90 nanoseconds.
• Low power consumption: Designed to operate with low power requirements.

Package

The AT49BV1614-90TC comes in a surface-mount TSOP package.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The AT49BV1614-90TC is typically packaged in reels, with each reel containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 16 Megabits
• Access Time: 90 Nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The AT49BV1614-90TC has a total of 48 pins. Below is the detailed pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ15: Data Input/Output
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. VCC: Power Supply
7. GND: Ground

Please refer to the datasheet for a complete pinout diagram.

Functional Features

• Random Access: Allows for direct access to any memory location.
• Erase and Program Operations: Supports both erase and program operations for data modification.
• Sector Architecture: Divides the memory into sectors, enabling selective erasure and programming.
• Automatic Page Write: Facilitates efficient programming of multiple bytes at once.

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity meets the demands of modern electronic systems.
• Fast access time enables quick retrieval of data.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: The memory cells have a finite number of erase/write cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49BV1614-90TC utilizes flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges determine the state of each memory cell, allowing for data storage even when power is removed. The memory can be erased and programmed using specific voltage levels applied to the control pins.

Detailed Application Field Plans

The AT49BV1614-90TC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Its high capacity, fast access time, and non-volatile nature make it suitable for storing firmware, software code, configuration data, and other critical information in these applications.

Detailed and Complete Alternative Models

1. AT49BV1614T-90TI: Similar specifications and features, available in a different package (TSOP-I).
2. AT49BV1614-90CI: Same specifications and features, available in a ceramic DIP package.
3. AT49BV1614-90VC: Same specifications and features, available in a TSOP II package.

These alternative models provide flexibility in terms of package options while maintaining compatibility and functionality with the AT49BV1614-90TC.

Note: The above information is based on the available data at the time of writing. For the most accurate and up-to-date information, please refer to the manufacturer's datasheet.