AT49BV161-70TI

Product Overview

Category

AT49BV161-70TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV161-70TI retains stored data even when power is removed.
• High capacity: It has a storage capacity of 16 megabits (2 megabytes).
• Fast access time: The device offers a fast access time of 70 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The AT49BV161-70TI comes in a Thin Small Outline Package (TSOP) with 48 pins.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT49BV161-70TI is typically packaged in reels or tubes, with each package containing a specific quantity of devices. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash
• Organization: 2M x 8
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

The AT49BV161-70TI has a total of 48 pins, which are assigned different functions. Here is the detailed pin configuration:

1. A0-A19: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. RP: Ready/Busy
7. VCC: Power Supply
8. GND: Ground

Functional Features

• Fast Read and Write Operations: The AT49BV161-70TI offers high-speed read and write operations, allowing for efficient data transfer.
• Sector Erase Capability: It supports sector erase operations, enabling selective erasure of specific memory sectors.
• Hardware Data Protection: The device includes hardware protection features to prevent accidental writes or erasures.
• Automatic Program and Erase Algorithms: The AT49BV161-70TI incorporates built-in algorithms that simplify the programming and erasing processes.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited erase/write cycles may affect the lifespan of the device.
• Relatively higher cost compared to other types of memory.

Working Principles

The AT49BV161-70TI utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and charge storage mechanisms to achieve non-volatile storage. When data is written, charges are trapped in the floating gate, altering the transistor's behavior and preserving the stored information. During read operations, the trapped charges are detected, allowing the retrieval of the stored data.

Detailed Application Field Plans

The AT49BV161-70TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its high capacity, fast access time, and non-volatile nature make it suitable for applications that require reliable and efficient data storage.

Detailed and Complete Alternative Models

• AT49BV1614T: 16 Megabit (2 Megabyte) Flash Memory with 4KB Sectors
• AT49BV161T: 16 Megabit (2 Megabyte) Flash Memory with 64KB Sectors
• AT49BV161DT: 16 Megabit (2 Megabyte) Flash Memory with 128KB Sectors

These alternative models offer similar functionality and capacity, but with different sector sizes to cater to specific application requirements.

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