AT49BV002T-12VC

Product Overview

Category

AT49BV002T-12VC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: The AT49BV002T-12VC has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It has a maximum access time of 120 nanoseconds.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT49BV002T-12VC is available in a standard 32-pin TSOP (Thin Small Outline Package).

Essence

The essence of AT49BV002T-12VC lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The device is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of AT49BV002T-12VC chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Maximum Access Time: 120 ns
• Erase/Program Suspend: Yes
• Sector Architecture: Uniform sector architecture with 4 Kbyte sectors
• Data Retention: 20 years

Detailed Pin Configuration

The AT49BV002T-12VC has a total of 32 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. WE#
11. OE#
12. CE#
13. BYTE#
14. NC
15. DQ0
16. DQ1
17. DQ2
18. DQ3
19. DQ4
20. DQ5
21. DQ6
22. DQ7
23. RY/BY#
24. RESET#
25. RP#
26. VSS
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Fast Read Access Time: The AT49BV002T-12VC offers a maximum access time of 120 ns, allowing for quick retrieval of stored data.
• Low Power Consumption: The device operates at low power levels, making it suitable for battery-powered applications.
• Erase/Program Suspend: It supports erase and program suspend operations, providing flexibility in programming and updating data.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for portable devices.

Disadvantages

• Limited write endurance compared to other types of memory.
• Higher cost per bit compared to volatile memory technologies.
• Requires specific programming algorithms for proper operation.

Working Principles

The AT49BV002T-12VC is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve digital information. When data is written, electrons are trapped in the floating gate, altering the transistor's behavior. This alteration allows the device to retain the written data even when power is turned off. During read operations, the stored data is retrieved by sensing the transistor's behavior.

Detailed Application Field Plans

The AT49BV002T-12VC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to AT49BV002T-12VC include: - AT49BV001T-12VC: 1 megabit non-volatile memory device with similar characteristics. - AT49BV004T-12VC: 4 megabit non-volatile memory device with higher storage capacity. - AT49BV008T-12VC: 8 megabit non-volatile memory device with even higher storage capacity.

These alternative models offer different storage capacities to cater to specific application requirements.

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