AT49BV002N-12VI

Product Overview

Category

AT49BV002N-12VI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV002N-12VI retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 2 megabits (256 kilobytes).
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• Fast access time: The AT49BV002N-12VI offers quick data access with a maximum access time of 120 nanoseconds.

Package

The AT49BV002N-12VI is available in a standard 32-pin plastic package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT49BV002N-12VI is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash
• Organization: 256K x 8 bits
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 120 ns
• Erase/Program Suspend: Yes
• Data Retention: 20 years

Detailed Pin Configuration

1. A16
2. A15
3. A14
4. A13
5. A12
6. A11
7. A10
8. A9
9. A8
10. VCC
11. A7
12. A6
13. A5
14. A4
15. A3
16. A2
17. A1
18. A0
19. OE#
20. CE#
21. WE#
22. BYTE#
23. NC
24. DQ0
25. DQ1
26. DQ2
27. DQ3
28. DQ4
29. DQ5
30. DQ6
31. DQ7
32. GND

Functional Features

• Erase and Program Operations: The AT49BV002N-12VI supports both sector erase and byte program operations.
• Suspend/Resume Functionality: It allows the suspension of an ongoing erase or program operation, which can be later resumed.
• Hardware Data Protection: This device features a hardware protection mechanism to prevent accidental data modification.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life.
• Fast access time enables quick data retrieval.

Disadvantages

• Limited write endurance compared to other memory technologies.
• Higher cost per bit compared to volatile memory options.

Working Principles

The AT49BV002N-12VI utilizes flash memory technology, which stores data by trapping electrons in floating gate transistors. When programming, high voltages are applied to the memory cells, allowing electrons to tunnel into the floating gate. Erasing is achieved by removing the trapped electrons from the floating gate. The presence or absence of charge in the floating gate determines the stored data.

Detailed Application Field Plans

The AT49BV002N-12VI finds application in various electronic systems, including: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. AT49BV001N-12VI: 1 megabit non-volatile memory with similar specifications.
2. AT49BV004N-12VI: 4 megabit non-volatile memory with similar specifications.
3. AT49BV008N-12VI: 8 megabit non-volatile memory with similar specifications.

These alternative models offer different storage capacities to suit specific application requirements.

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