AT49BV002N-12TC

Product Overview

Category

AT49BV002N-12TC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49BV002N-12TC has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It operates at a maximum access time of 120 nanoseconds.
• Low power consumption: The device is designed to minimize power usage during operation.
• Reliable: It offers high endurance and data retention capabilities.

Package

The AT49BV002N-12TC is available in a surface-mount TSOP package, which stands for Thin Small Outline Package. This package type allows for easy integration onto printed circuit boards.

Essence

The essence of AT49BV002N-12TC lies in its ability to provide non-volatile memory storage with high capacity and fast access times.

Packaging/Quantity

The product is typically packaged in reels or tubes, containing a specific quantity of devices per package. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash
• Organization: 256K x 8 bits
• Voltage Range: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT49BV002N-12TC has a total of 32 pins, each serving a specific function. Here is a detailed pin configuration:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. RP/RP#: Ready/Busy Output
7. VCC: Power Supply
8. GND: Ground

Functional Features

• Easy integration: The device can be easily interfaced with various microcontrollers and other digital systems.
• High-speed operation: It offers fast access times, allowing for efficient data retrieval.
• Low power consumption: The AT49BV002N-12TC is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable data storage: The flash memory technology ensures reliable data retention and endurance.

Advantages and Disadvantages

Advantages

• Non-volatile memory: Data is retained even without power, ensuring data integrity.
• High capacity: The 2 megabit storage capacity allows for storing a large amount of data.
• Fast access time: The device operates at a maximum access time of 120 ns, enabling quick data retrieval.
• Low power consumption: It consumes minimal power during operation, prolonging battery life in portable devices.

Disadvantages

• Limited erase/program cycle endurance: The device has a limited number of erase/program cycles before potential degradation.
• Relatively small storage compared to newer technologies: With the advancement of memory technologies, higher-capacity options are available.

Working Principles

The AT49BV002N-12TC utilizes flash memory technology to store and retrieve digital information. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, charges are trapped within the memory cells, representing the stored information. During read operations, the charges are detected, allowing the retrieval of the stored data.

Detailed Application Field Plans

The AT49BV002N-12TC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• AT49BV001N-12TC: 1 megabit flash memory with similar specifications.
• AT49BV004N-12TC: 4 megabit flash memory with similar specifications.
• AT49BV008N-12TC: 8 megabit flash memory with similar specifications.

These alternative models offer different storage capacities while maintaining compatibility and similar performance characteristics.

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