AT49BV002N-12JI

Product Overview

Category

AT49BV002N-12JI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV002N-12JI retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: The AT49BV002N-12JI offers a fast access time of 120 nanoseconds.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.

Package

The AT49BV002N-12JI is available in a standard JEDEC 32-pin PLCC package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT49BV002N-12JI is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Memory Type: Flash
• Organization: 256K x 8 bits
• Voltage Range: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. DQ0
14. DQ1
15. DQ2
16. DQ3
17. DQ4
18. DQ5
19. DQ6
20. DQ7
21. WE#
22. CE#
23. OE#
24. BYTE#
25. RESET#
26. RP#
27. VSS
28. NC
29. A15
30. A13
31. A8
32. A9

Functional Features

• Byte-wide and word-wide access modes.
• Sector erase capability for efficient memory management.
• Hardware and software data protection mechanisms.
• Automatic sleep mode to reduce power consumption during idle periods.
• Fast programming time for quick data updates.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even in the absence of power.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of stored information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited erase/program cycle endurance may affect long-term reliability.
• Higher cost compared to other types of memory technologies.
• Limited compatibility with certain legacy systems due to specific pin configuration.

Working Principles

The AT49BV002N-12JI utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These trapped charges represent binary information (0s and 1s). The device can be programmed by applying a high voltage to the control gates of the memory cells, allowing charges to be injected or removed from the floating gates. Data can be read by applying appropriate voltages to the memory cells and sensing the resulting electrical currents.

Detailed Application Field Plans

The AT49BV002N-12JI finds applications in various electronic systems, including: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV002N-12TU
2. AT49BV002N-12VI
3. AT49BV002N-12VC
4. AT49BV002N-12TC
5. AT49BV002N-12JC

These alternative models offer similar specifications and functionality to the AT49BV002N-12JI, providing options for different package types or temperature ranges.

In conclusion, the AT49BV002N-12JI is a non-volatile memory device with a high storage capacity and fast access time. It offers reliable data storage and retrieval in various electronic applications. While it has advantages such as non-volatility and low power consumption, it also has limitations in terms of endurance and compatibility. Nonetheless, it serves as a crucial component in embedded systems, consumer electronics, automotive electronics, industrial control systems, and communication devices.