AT49BV002ANT-70JU

Product Overview

Category

AT49BV002ANT-70JU belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49BV002ANT-70JU has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: The device operates at low power, making it suitable for battery-powered applications.

Package

The AT49BV002ANT-70JU is available in a standard JEDEC 32-pin PLCC package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49BV002ANT-70JU is typically packaged in reels or tubes, with a quantity of 1000 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

The AT49BV002ANT-70JU has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. RY/BY#
27. RESET#
28. VSS
29. A8
30. A9
31. A11
32. A13

Functional Features

• Easy integration: The AT49BV002ANT-70JU can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: The device supports a standard parallel interface, making it compatible with various microcontrollers and processors.
• Sector erase capability: The memory can be erased in sectors, allowing for efficient management of data.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the device.
• Higher cost compared to other types of memory technologies.
• Relatively larger physical size compared to some newer memory technologies.

Working Principles

The AT49BV002ANT-70JU utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cell, altering its state. To read the stored data, the cell's state is detected by sensing the electrical current flowing through it. This non-volatile memory technology allows for reliable and long-term data storage.

Detailed Application Field Plans

The AT49BV002ANT-70JU finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its high capacity, fast access time, and non-volatile nature make it suitable for storing firmware, configuration data, and other critical information in these applications.

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the AT49BV002ANT-70JU include: - AT49BV001ANT-55JU - AT49BV004ANT-90JU - AT49BV008ANT-120JU

These models differ in terms of storage capacity, access time, and package type, allowing users to choose the most suitable option for their specific requirements.

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