AT49BV002AN-70JU

Product Overview

Category

AT49BV002AN-70JU belongs to the category of non-volatile memory devices.

Use

It is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The data stored in AT49BV002AN-70JU remains intact even when power is turned off.
• High capacity: It has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: The device offers quick read and write operations.
• Low power consumption: AT49BV002AN-70JU is designed to consume minimal power during operation.
• Wide operating voltage range: It can operate within a voltage range of 2.7V to 3.6V.

Package

AT49BV002AN-70JU is available in a standard 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT49BV002AN-70JU lies in its ability to provide reliable and non-volatile storage for electronic devices, ensuring data integrity and fast access times.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49BV002AN-70JU chips. The exact quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 2 Megabits (256 Kilobytes)
• Organization: 256K x 8 bits
• Access Time:
  • Read: 70 nanoseconds
  • Page Mode Read: 25 nanoseconds
  • Byte/Page Program: 10 microseconds per byte
• Operating Voltage Range: 2.7V to 3.6V
• Standby Current: 10 microamps (typical)
• Package Type: 32-pin PLCC

Detailed Pin Configuration

The pin configuration of AT49BV002AN-70JU is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. A15
32. A13

Functional Features

AT49BV002AN-70JU offers the following functional features:

• Random access read and write operations.
• Page mode read for faster access times.
• Byte and page programming modes for flexible data storage.
• Built-in protection mechanisms to prevent accidental data corruption.
• Low power consumption during standby mode.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data integrity even during power loss.
• High storage capacity suitable for various applications.
• Fast access times for efficient data retrieval.
• Wide operating voltage range allows compatibility with different systems.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles.
• Relatively higher cost compared to other types of memory.
• Susceptible to data corruption from electrical noise or environmental factors.

Working Principles

AT49BV002AN-70JU utilizes flash EEPROM technology for data storage. It consists of a grid of memory cells, each capable of storing one bit of information. These cells are organized into rows and columns, forming an addressable array.

To write data, the device applies a high voltage to the selected memory cell, causing electrons to be trapped in a floating gate. This alters the threshold voltage of the cell, representing either a "0" or "1" bit. Reading data involves sensing the threshold voltage of the memory cells.

The device incorporates various control signals (WE#, OE#, CE#) to enable read, write, and erase operations. These signals, along with the address and data lines, allow for efficient communication between the memory and the host system.

Detailed Application Field Plans

AT49BV002AN-70JU finds applications in a wide range of electronic devices, including:

1. Microcontrollers: Used for program storage in microcontroller-based systems.
2. Embedded Systems: Provides non-volatile memory for firmware and configuration data.
3. Consumer Electronics: Enables data storage in devices such as digital