AT49BV001AT-55TI

Product Overview

Category

The AT49BV001AT-55TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49BV001AT-55TI retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It offers a fast access time of 55 nanoseconds.
• Low power consumption: The AT49BV001AT-55TI operates on low power, making it suitable for battery-powered devices.

Package

The AT49BV001AT-55TI is available in a standard 32-pin TSOP (Thin Small Outline Package).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT49BV001AT-55TI is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

The AT49BV001AT-55TI has a total of 32 pins, each serving a specific function. Here is the detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VCC - Power Supply
10. A8 - Address Input
11. A9 - Address Input
12. A10 - Address Input
13. A11 - Address Input
14. A12 - Address Input
15. A13 - Address Input
16. A14 - Address Input
17. A15 - Address Input
18. OE# - Output Enable
19. CE# - Chip Enable
20. WE# - Write Enable
21. I/O0 - Data Input/Output
22. I/O1 - Data Input/Output
23. I/O2 - Data Input/Output
24. I/O3 - Data Input/Output
25. I/O4 - Data Input/Output
26. I/O5 - Data Input/Output
27. I/O6 - Data Input/Output
28. I/O7 - Data Input/Output
29. RY/BY# - Ready/Busy Output
30. RESET# - Reset Input
31. GND - Ground
32. NC - No Connection

Functional Features

• Fast Read and Write Operations: The AT49BV001AT-55TI offers high-speed read and write operations, allowing for efficient data access.
• Sector Erase Capability: This device supports sector erase operations, enabling selective erasure of specific memory sectors.
• Hardware Data Protection: It provides hardware protection mechanisms to prevent accidental data modification or corruption.
• Low Power Consumption: The AT49BV001AT-55TI operates on low power, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing a significant amount of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited erase and program cycles may restrict the lifespan of the device.
• Relatively higher cost compared to other memory technologies.
• Susceptible to physical damage due to its small form factor.

Working Principles

The AT49BV001AT-55TI utilizes flash EEPROM technology for data storage. It consists of a grid of memory cells, where each cell can store one bit of information. The data is stored by trapping electric charges within the floating gate of each memory cell. These trapped charges represent the binary states of 0 or 1.

During read operations, the stored charges are measured to determine the stored data. When writing or erasing data, high voltages are applied to the appropriate pins to modify the charge levels within the memory cells.

Detailed Application Field Plans

The AT49BV001AT-55TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its non-volatile nature, high capacity, and