AT29C020-90TC

Product Overview

Category: Integrated Circuit (IC)

Use: The AT29C020-90TC is a high-performance, low-power CMOS 2-megabit (256K x 8) electrically erasable programmable read-only memory (EEPROM). It is designed for use in various electronic devices that require non-volatile storage.

Characteristics: - High performance - Low power consumption - Electrically erasable and reprogrammable - Non-volatile storage - Large storage capacity (2 megabits) - Compact size

Package: The AT29C020-90TC is available in a surface-mount 32-lead Thin Small Outline Package (TSOP) with a thickness of 1.2mm. This package ensures easy integration into electronic circuits and provides protection against environmental factors.

Essence: The essence of the AT29C020-90TC lies in its ability to store data reliably and retain it even when power is removed. This makes it an essential component in many electronic devices where non-volatile memory is required.

Packaging/Quantity: The AT29C020-90TC is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

• Memory Size: 2 Megabits (256K x 8)
• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 90ns
• Standby Current: 100μA (typical)
• Programming Time: 10ms (typical)
• Erase Time: 10ms (typical)
• Data Retention: 20 years (minimum)

Detailed Pin Configuration

The AT29C020-90TC has a total of 32 pins, each serving a specific function. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VSS (Ground)
13. OE (Output Enable)
14. CE (Chip Enable)
15. WE (Write Enable)
16. NC (No Connection)
17. DQ0
18. DQ1
19. DQ2
20. DQ3
21. DQ4
22. DQ5
23. DQ6
24. DQ7
25. VCC (Power Supply)
26. RP (Reset/Programming)
27. A15
28. A13
29. A8
30. A9
31. A11
32. A10

Functional Features

• High-speed access: The AT29C020-90TC provides fast access to stored data with an access time of 90ns.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.
• Electrically erasable and reprogrammable: The EEPROM can be easily erased and reprogrammed electrically, eliminating the need for physical removal or replacement.
• Non-volatile storage: The stored data remains intact even when power is removed, ensuring reliable data retention.
• Large storage capacity: With a capacity of 2 megabits, the AT29C020-90TC offers ample space for storing critical information.

Advantages and Disadvantages

Advantages: - Fast access time - Low power consumption - Easy electrical erasure and reprogramming - Reliable data retention - Ample storage capacity

Disadvantages: - Limited write endurance (typically around 10,000 cycles) - Higher cost compared to other non-volatile memory options

Working Principles

The AT29C020-90TC utilizes a combination of CMOS technology and EEPROM architecture. It stores data in a grid of memory cells that can be electrically programmed or erased. The stored data is accessed by providing the appropriate address and control signals to the IC.

During programming, an electrical charge is applied to the memory cells, altering their state to represent the desired data. Erasing is achieved by applying a higher voltage to reset the memory cells to their initial state. The IC's internal circuitry handles the necessary operations for reading, writing, and erasing data.

Detailed Application Field Plans

The AT29C020-90TC finds applications in various electronic devices that require non-volatile memory, such as: - Microcontrollers - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Communication devices

Its ability to store critical information reliably makes it suitable for