AT28C64E-12SI

Product Overview

Category

AT28C64E-12SI belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is primarily used for non-volatile storage of digital data in various electronic devices.

Characteristics

• Electrically erasable and programmable
• Non-volatile memory
• High-density storage capacity
• Low power consumption
• Reliable and durable

Package

AT28C64E-12SI is available in a standard 28-pin Small Outline Integrated Circuit (SOIC) package.

Essence

The essence of AT28C64E-12SI lies in its ability to store and retrieve digital information reliably, while being easily programmable and erasable.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT28C64E-12SI chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Size: 64 kilobits (8 kilobytes)
• Operating Voltage: 2.7V to 5.5V
• Access Time: 120 nanoseconds
• Erase/Write Cycles: 10,000 minimum
• Data Retention: 10 years minimum
• Organization: 8,192 words × 8 bits

Detailed Pin Configuration

1. A14 - Address Input
2. A12 - Address Input
3. A7 - Address Input
4. A6 - Address Input
5. A5 - Address Input
6. A4 - Address Input
7. A3 - Address Input
8. A2 - Address Input
9. VSS - Ground
10. A1 - Address Input
11. A0 - Address Input
12. CE - Chip Enable
13. OE - Output Enable
14. WE - Write Enable
15. I/O0 - Data Input/Output
16. I/O1 - Data Input/Output
17. I/O2 - Data Input/Output
18. I/O3 - Data Input/Output
19. I/O4 - Data Input/Output
20. I/O5 - Data Input/Output
21. I/O6 - Data Input/Output
22. I/O7 - Data Input/Output
23. NC - No Connection
24. VCC - Power Supply
25. A8 - Address Input
26. A9 - Address Input
27. A11 - Address Input
28. A13 - Address Input

Functional Features

• Byte-wise programmable and erasable
• High-speed data transfer
• Low power consumption during standby mode
• Automatic write timing
• Hardware and software data protection mechanisms

Advantages and Disadvantages

Advantages

• Reliable and durable storage solution
• Easy to program and erase
• High-density storage capacity
• Low power consumption
• Suitable for a wide range of applications

Disadvantages

• Limited number of erase/write cycles
• Relatively slower access time compared to other memory technologies
• Higher cost per bit compared to some alternative memory solutions

Working Principles

AT28C64E-12SI utilizes the principle of electrically altering the state of floating gate transistors to store and retrieve digital information. The memory cells are organized in a matrix, with each cell representing a bit of data. By applying specific voltage levels to the control pins, the data can be written, read, or erased.

Detailed Application Field Plans

AT28C64E-12SI finds applications in various electronic devices that require non-volatile storage, such as: - Microcontrollers - Embedded systems - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

1. AT28C64B-15PU - Similar EEPROM chip with a higher access time of 150 nanoseconds.
2. AT28C256-15PC - Higher capacity EEPROM chip with 256 kilobits (32 kilobytes) of memory.
3. AT29C010A-12JC - Flash memory chip with 1 megabit (128 kilobytes) of memory.

These alternative models offer different specifications and features, allowing users to choose the most suitable option for their specific requirements.

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