AT27BV040-12VI

Product Overview

Category

AT27BV040-12VI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT27BV040-12VI has a storage capacity of 4 megabits (512 kilobytes).
• Low power consumption: It operates at low voltage levels, reducing power requirements.
• Fast access time: The device offers quick read and write operations.
• Durable: The memory cells have a high endurance, allowing for frequent read/write cycles.

Package

The AT27BV040-12VI is available in a standard integrated circuit package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT27BV040-12VI is typically packaged in trays or reels, with a quantity of 250 units per tray/reel.

Specifications

• Memory Type: Non-volatile
• Capacity: 4 Megabits (512 Kilobytes)
• Access Time: 120 nanoseconds
• Operating Voltage: 2.7V - 3.6V
• Package Type: Integrated Circuit
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. CE: Chip enable
4. OE: Output enable
5. WE: Write enable
6. I/O0-I/O7: Data input/output lines
7. RESET: Reset pin
8. NC: No connection

Functional Features

• Random access: Allows for reading and writing data at any memory location.
• Sector erase: Supports erasing specific sectors of the memory for efficient data management.
• Write protection: Provides write protection for selected memory areas to prevent accidental modification.
• Data retention: Ensures long-term data integrity with minimal power consumption.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data is retained even without power, ensuring data integrity.
• High capacity: Offers ample storage space for various applications.
• Fast access time: Enables quick retrieval and modification of stored data.
• Low power consumption: Reduces energy requirements, making it suitable for battery-powered devices.

Disadvantages

• Limited rewrite cycles: The memory cells have a finite number of write/erase cycles before degradation.
• Relatively high cost: Non-volatile memory technologies tend to be more expensive compared to volatile alternatives.

Working Principles

The AT27BV040-12VI utilizes flash memory technology. It stores data by trapping electric charges in floating gate transistors. These charges represent binary information, which can be read or modified through appropriate control signals. The non-volatile nature of the memory ensures that the stored data remains intact even when power is removed.

Detailed Application Field Plans

The AT27BV040-12VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its high capacity, fast access time, and non-volatile characteristics make it suitable for storing firmware, configuration data, and other critical information in these applications.

Detailed and Complete Alternative Models

1. AT27C040-12PC: Similar specifications, but with a different package type (DIP).
2. AT45DB041D: Serial interface flash memory with higher capacity and additional features.
3. SST39SF040: Another 4-megabit flash memory device with similar characteristics.

These alternative models offer similar functionality and can be considered as substitutes for the AT27BV040-12VI in specific applications.

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