AT27BV040-12JC

Product Overview

Category

AT27BV040-12JC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT27BV040-12JC has a storage capacity of 4 megabits (512 kilobytes).
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• Fast access time: The device offers a fast access time of 120 nanoseconds.

Package

The AT27BV040-12JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT27BV040-12JC is typically packaged in reels or tubes, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash EEPROM
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 120 ns
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT27BV040-12JC has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VSS (Ground)
13. DQ0
14. DQ1
15. DQ2
16. DQ3
17. DQ4
18. DQ5
19. DQ6
20. DQ7
21. WE# (Write Enable)
22. CE# (Chip Enable)
23. OE# (Output Enable)
24. NC (No Connection)
25. A8
26. A9
27. A11
28. A10
29. A13
30. BYTE#
31. VCC (Power Supply)
32. WP# (Write Protect)

Functional Features

• Byte-wide operations: The AT27BV040-12JC supports byte-level read and write operations.
• Sector erase capability: It allows for erasing specific sectors of the memory, enabling efficient data management.
• Hardware and software protection: The device offers write protection features to prevent accidental modification or erasure of stored data.
• High reliability: With a high endurance of 10,000 erase/program cycles, the AT27BV040-12JC ensures long-term data retention.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity even during power loss.
• Fast access time allows for quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.
• Sector erase capability enables efficient data management.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Higher cost per bit compared to some alternative models.

Working Principles

The AT27BV040-12JC utilizes flash EEPROM technology to store digital information. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, charges are trapped in the floating gate of each memory cell, representing the stored information. These charges can be removed during the erase operation, allowing the cells to be reprogrammed.

Detailed Application Field Plans

The AT27BV040-12JC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT28C64B-15PU: 64K (8K x 8) Parallel EEPROM
2. AT45DB161E-SHN-T: 16Mbit (2M x 8) DataFlash
3. AT25SF041-SSHD-T: 4Mbit (512K x 8) Serial NOR Flash Memory
4. AT24C256C-SSHL-T: 256Kbit (32K x 8) I2C-Compatible EEPROM

These alternative models offer different capacities, interfaces, and features, providing options for various application requirements.

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