AT27BV010-90TI

Product Overview

Category

AT27BV010-90TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT27BV010-90TI has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It operates at a speed of 90 nanoseconds, allowing for quick data retrieval.
• Low power consumption: The device is designed to minimize power usage, making it suitable for battery-powered applications.

Package

The AT27BV010-90TI is available in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT27BV010-90TI is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Memory Type: Electrically Erasable Programmable Read-Only Memory (EEPROM)
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Endurance: 100,000 write cycles

Detailed Pin Configuration

The AT27BV010-90TI has a total of 32 pins, which are assigned specific functions. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VSS - Ground
10. CE - Chip Enable
11. OE - Output Enable
12. WE - Write Enable
13. I/O0 - Data Input/Output
14. I/O1 - Data Input/Output
15. I/O2 - Data Input/Output
16. I/O3 - Data Input/Output
17. I/O4 - Data Input/Output
18. I/O5 - Data Input/Output
19. I/O6 - Data Input/Output
20. I/O7 - Data Input/Output
21. NC - No Connection
22. NC - No Connection
23. NC - No Connection
24. VCC - Power Supply
25. A8 - Address Input
26. A9 - Address Input
27. A10 - Address Input
28. A11 - Address Input
29. A12 - Address Input
30. A13 - Address Input
31. A14 - Address Input
32. A15 - Address Input

Functional Features

• Byte-wise Read and Write: The AT27BV010-90TI allows individual bytes to be read from or written to, providing flexibility in data manipulation.
• Block Erase Capability: It supports the erasure of entire memory blocks, enabling efficient management of data storage.
• Hardware Data Protection: The device features a write protection mechanism that prevents accidental modification of stored data.
• Fast Access Time: With a speed of 90 nanoseconds, the AT27BV010-90TI ensures quick access to stored information.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life.
• Fast access time allows for efficient data retrieval.

Disadvantages

• Limited endurance of 100,000 write cycles.
• Relatively higher cost compared to other memory technologies.

Working Principles

The AT27BV010-90TI utilizes EEPROM technology, which combines the benefits of both electrically erasable and programmable read-only memory. It stores data by trapping electrical charges in a floating gate structure, allowing information to be retained even when power is removed. The device can be written to or read from using specific control signals, enabling data manipulation as required.

Detailed Application Field Plans

The AT27BV010-90TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Medical devices

Its non-volatile nature, high capacity, and fast access time make it suitable for storing firmware, configuration data, and other critical information in these fields.

Detailed and Complete Alternative Models

• AT27C010-90TI: Similar to the AT27BV010-90TI, but with a one-time programmable (OTP) memory type.