AT25256B-MAHL-T

Product Overview

Category

AT25256B-MAHL-T belongs to the category of non-volatile memory integrated circuits.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, digital cameras, and consumer electronics.

Characteristics

• Non-volatile: The AT25256B-MAHL-T retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 256 kilobits (32 kilobytes).
• Low power consumption: The device operates on low power, making it suitable for battery-powered applications.
• High-speed performance: It provides fast read and write operations, enabling efficient data access.

Package

The AT25256B-MAHL-T is available in a surface-mount package, which ensures easy integration onto circuit boards.

Essence

The essence of this product lies in its ability to store and retrieve data reliably, making it an essential component in many electronic devices.

Packaging/Quantity

The AT25256B-MAHL-T is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Serial EEPROM
• Memory Size: 256 kilobits (32 kilobytes)
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 1.8V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 100 years
• Endurance: 1 million write cycles

Detailed Pin Configuration

The AT25256B-MAHL-T has a total of 8 pins, each serving a specific function:

1. Chip Select (/CS): Enables communication with the device when pulled low.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Used to input data into the device.
4. Serial Data Output (SO): Outputs data from the device.
5. Write Protect (/WP): When pulled low, prevents write operations.
6. Hold (/HOLD): Pauses ongoing operations when pulled low.
7. VCC: Power supply voltage (+1.8V to +5.5V).
8. Ground (GND): Common ground reference.

Functional Features

• Byte and Page Write Operations: Allows data to be written in individual bytes or larger page sizes for efficient programming.
• Software Protection: Provides software-controlled write protection to prevent accidental modification of stored data.
• Sequential Read: Supports sequential read operations, enabling faster access to consecutive memory locations.
• Status Register: Contains various status bits that provide information about the device's operating conditions.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for a wide range of applications.
• Low power consumption extends battery life in portable devices.
• Fast read and write operations enhance overall system performance.

Disadvantages

• Limited endurance with a maximum of 1 million write cycles.
• Relatively small memory size compared to other storage options.
• Requires an external microcontroller or interface for communication.

Working Principles

The AT25256B-MAHL-T utilizes the Serial Peripheral Interface (SPI) protocol to communicate with the host microcontroller. It stores data in non-volatile memory cells, which retain their state even without power. The device can be accessed by sending specific commands through the SPI interface, allowing data to be read, written, or erased as required.

Detailed Application Field Plans

The AT25256B-MAHL-T finds application in various fields, including: 1. Microcontrollers: Used for program storage and data logging. 2. Digital Cameras: Stores image data and camera settings. 3. Consumer Electronics: Enables firmware updates and configuration storage in devices like smart TVs and set-top boxes.

Detailed and Complete Alternative Models

1. AT25DF256-WHFT: A similar SPI-based serial EEPROM with a higher storage capacity of 256 kilobits.
2. AT24C32N-SH-T: An I2C-compatible EEPROM with a smaller memory size of 32 kilobits but lower power consumption.
3. MX25L12835FZNI-10G: A high-speed serial flash memory with a larger capacity of 128 megabits, suitable for more demanding applications.

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