AT25080N-10SI-1.8

Product Overview

Category

AT25080N-10SI-1.8 belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is commonly used for storing small amounts of non-volatile data in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile memory: The stored data remains intact even when power is removed.
• Electrically erasable and programmable: The memory can be erased and reprogrammed electrically, without requiring additional equipment.
• Small form factor: The chip is compact in size, making it suitable for integration into space-constrained devices.
• Low power consumption: The AT25080N-10SI-1.8 operates efficiently with minimal power requirements.
• High reliability: The product offers robust performance and long-term data retention.
• Wide operating voltage range: It can operate within a voltage range of 1.8V to 5.5V.

Package and Quantity

The AT25080N-10SI-1.8 is typically available in a small surface-mount package, such as SOIC (Small Outline Integrated Circuit). The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

• Memory capacity: 8 kilobits (1 kilobyte)
• Interface: Serial Peripheral Interface (SPI)
• Operating voltage: 1.8V - 5.5V
• Operating temperature range: -40°C to +85°C
• Write endurance: 1 million write cycles
• Data retention: 100 years

Pin Configuration

The AT25080N-10SI-1.8 has a standard 8-pin configuration:

┌───┬───┐ │ 1 │ 8 │ │ │ │ ┌──┴───┴───┴──┐ │ │ │ │ └─────────────┘

Functional Features

• Byte-level read and write operations: Allows for flexible data manipulation.
• Hardware and software protection mechanisms: Ensures data integrity and prevents unauthorized access.
• Sequential read mode: Enables efficient retrieval of consecutive memory locations.
• Write protect pin: Provides an option to disable write operations for enhanced security.

Advantages

• Compact size and low power consumption make it suitable for portable and battery-powered devices.
• High reliability ensures long-term data storage without corruption.
• Wide operating voltage range allows compatibility with various systems.
• Easy integration into existing designs due to the standard SPI interface.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write speeds compared to some alternative models.
• Vulnerable to certain types of physical damage, such as electrostatic discharge (ESD).

Working Principles

The AT25080N-10SI-1.8 utilizes a floating gate transistor structure to store and retrieve data. When writing data, an electrical charge is applied to the floating gate, altering its conductivity and storing the desired information. During read operations, the stored charge is measured, allowing the retrieval of the stored data.

Application Field Plans

The AT25080N-10SI-1.8 finds applications in various fields, including: - Automotive electronics: Used for storing vehicle configuration data, mileage records, and diagnostic information. - Industrial control systems: Employed for storing calibration data, system parameters, and event logs. - Consumer electronics: Integrated into devices like smart TVs, set-top boxes, and gaming consoles for firmware storage and user settings.

Alternative Models

For those seeking alternatives to the AT25080N-10SI-1.8, the following models offer similar functionality: - AT25040N-10SI-2.7: 4 kilobits capacity, operating voltage range of 2.7V to 5.5V. - AT25128N-10SI-2.5: 128 kilobits capacity, operating voltage range of 2.5V to 5.5V. - AT25256N-10SI-3.3: 256 kilobits capacity, operating voltage range of 3.3V to 5.5V.

In conclusion, the AT25080N-10SI-1.8 is a compact and reliable Serial EEPROM chip used for non-volatile data storage in various electronic devices. Its wide operating voltage range, low power consumption, and byte-level manipulation capabilities make it suitable for diverse applications. However, its limited storage capacity and slower write speeds should be considered when selecting an appropriate memory solution.