AT25010AY6-10YH-1.8

Product Overview

Category

AT25010AY6-10YH-1.8 belongs to the category of Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is commonly used for non-volatile storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile memory: The data stored in AT25010AY6-10YH-1.8 remains even when power is removed.
• High endurance: This chip can withstand a large number of read/write cycles.
• Low power consumption: It operates at low voltage levels, making it suitable for battery-powered devices.
• Small form factor: The package size is compact, allowing for integration into space-constrained designs.

Package

AT25010AY6-10YH-1.8 is available in a standard 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems, ensuring data integrity even during power loss or system shutdown.

Packaging/Quantity

AT25010AY6-10YH-1.8 is typically sold in reels containing a quantity of 2500 units per reel.

Specifications

• Memory capacity: 1 kilobit (128 bytes)
• Operating voltage: 1.8V
• Interface: SPI (Serial Peripheral Interface)
• Maximum clock frequency: 10 MHz
• Data retention: Up to 100 years
• Endurance: Up to 1 million write cycles

Detailed Pin Configuration

1. Chip Select (/CS)
2. Serial Clock (SCK)
3. Serial Data Input (SI/MOSI)
4. Serial Data Output (SO/MISO)
5. Write Protect (/WP)
6. VCC (Power Supply)
7. Ground (GND)
8. Hold (/HOLD)

Functional Features

• Byte-level Read/Write: Allows individual bytes to be read from or written to the memory.
• Sequential Read: Supports continuous reading of multiple bytes without the need for repeated address input.
• Write Protection: The /WP pin can be used to protect the memory from accidental writes.
• Software and Hardware Write Enable: Provides flexibility in enabling or disabling write operations.
• Chip Erase: Allows the entire memory to be erased in a single operation.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity during power loss.
• High endurance allows for frequent read/write operations.
• Low power consumption extends battery life in portable devices.
• Compact form factor enables integration into space-constrained designs.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write speed compared to volatile memory types.
• Relatively higher cost per bit compared to larger capacity EEPROMs.

Working Principles

AT25010AY6-10YH-1.8 utilizes EEPROM technology, which is based on floating gate transistors. Data is stored by trapping charge in the floating gate, altering the transistor's threshold voltage. This trapped charge can be electrically erased and reprogrammed using specific voltage levels applied to the control pins.

Detailed Application Field Plans

AT25010AY6-10YH-1.8 finds applications in various electronic systems, including but not limited to: - Microcontrollers and embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT25010AY6-10YH-1.8 include: - AT25020A-10PU-2.7: 2 kilobit EEPROM with a wider operating voltage range. - AT25040B-SSHL-T: 4 kilobit EEPROM in a smaller package size. - AT25128AN-10SI-2.5: 128 kilobit EEPROM with higher storage capacity.

These alternative models can be considered based on specific project requirements and system constraints.

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