AT24C512N-10SI-1.8

Product Overview

Category

AT24C512N-10SI-1.8 belongs to the category of non-volatile electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for storing and retrieving data in electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electronically.
• Programmable: Allows users to write and modify data multiple times.
• High storage capacity: The AT24C512N-10SI-1.8 has a capacity of 512 kilobits (64 kilobytes).
• Low power consumption: Operates at a low voltage and consumes minimal power.
• Wide operating temperature range: Can function reliably in temperatures ranging from -40°C to +85°C.

Package

The AT24C512N-10SI-1.8 is available in an 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT24C512N-10SI-1.8 is typically packaged in reels containing a quantity of 2500 units.

Specifications

• Memory Capacity: 512 kilobits (64 kilobytes)
• Operating Voltage: 1.7V to 5.5V
• Maximum Clock Frequency: 1 MHz
• Write Cycle Time: 5 ms (maximum)
• Data Retention: 100 years (minimum)
• Endurance: 1 million write cycles (minimum)

Detailed Pin Configuration

The AT24C512N-10SI-1.8 has the following pin configuration:

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. GND: Ground
5. SDA: Serial Data Input/Output
6. SCL: Serial Clock Input
7. WP: Write Protect
8. VCC: Power Supply

Functional Features

• Random Access: Allows direct access to any memory location.
• Byte-Level Read and Write Operations: Enables efficient data manipulation.
• Page Write Buffer: Facilitates faster write operations by storing multiple bytes before committing them to memory.
• Hardware Write Protection: The WP pin can be used to protect the memory from accidental writes.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity even during power loss.
• High storage capacity for various applications.
• Low power consumption prolongs battery life in portable devices.
• Wide operating temperature range allows usage in extreme environments.

Disadvantages

• Relatively slower write cycle time compared to other memory technologies.
• Limited endurance of write cycles may affect long-term reliability.

Working Principles

The AT24C512N-10SI-1.8 utilizes an electrically erasable floating-gate transistor technology. It stores data by trapping charges in the floating gate, which can be erased or programmed using electrical signals. The memory is organized into multiple pages, and each page can be individually written or read.

Detailed Application Field Plans

The AT24C512N-10SI-1.8 finds applications in various fields, including: 1. Embedded Systems: Used for firmware storage in microcontrollers and IoT devices. 2. Industrial Automation: Stores configuration data and parameters for control systems. 3. Automotive Electronics: Stores vehicle settings, calibration data, and event logs. 4. Consumer Electronics: Used in smart TVs, set-top boxes, and audio/video equipment for data storage.

Detailed and Complete Alternative Models

1. AT24C01A: 1 kilobit (128 bytes) capacity.
2. AT24C02C: 2 kilobits (256 bytes) capacity.
3. AT24C04D: 4 kilobits (512 bytes) capacity.
4. AT24C08B: 8 kilobits (1 kilobyte) capacity.
5. AT24C16A: 16 kilobits (2 kilobytes) capacity.
6. AT24C32D: 32 kilobits (4 kilobytes) capacity.
7. AT24C64C: 64 kilobits (8 kilobytes) capacity.
8. AT24C128B: 128 kilobits (16 kilobytes) capacity.
9. AT24C256D: 256 kilobits (32 kilobytes) capacity.
10. AT24C1024C: 1024 kilobits (128 kilobytes) capacity.

These alternative models offer varying