AT24C32N-10SI-2.7

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Data storage and retrieval

Characteristics: - Non-volatile memory - 32 kilobits (4 kilobytes) of electrically erasable programmable read-only memory (EEPROM) - Serial interface - Low power consumption - Wide operating voltage range - Industrial temperature range (-40°C to +85°C)

Package: SOIC (Small Outline Integrated Circuit)

Essence: The AT24C32N-10SI-2.7 is a serial EEPROM IC that provides non-volatile data storage and retrieval capabilities. It is commonly used in various electronic devices for storing configuration settings, calibration data, and other small amounts of persistent information.

Packaging/Quantity: The AT24C32N-10SI-2.7 is typically sold in reels or tubes, with each reel/tube containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Size: 32 kilobits (4 kilobytes)
• Interface: I2C (Two-wire Serial Interface)
• Operating Voltage Range: 1.7V to 5.5V
• Maximum Clock Frequency: 400 kHz
• Write Cycle Time: 5 ms (maximum)
• Data Retention: 100 years (minimum)
• Endurance: 1 million write cycles (minimum)

Detailed Pin Configuration

The AT24C32N-10SI-2.7 has a total of 8 pins, which are assigned specific functions as follows:

1. A0: Address Input Bit 0
2. A1: Address Input Bit 1
3. A2: Address Input Bit 2
4. GND: Ground
5. SDA: Serial Data Input/Output
6. SCL: Serial Clock Input
7. WP: Write Protect (optional)
8. VCC: Power Supply

Functional Features

• Random access to any memory location
• Byte-wise and page-wise write operations
• Software write protection using the Write Protect (WP) pin
• Hardware write protection by connecting the WP pin to VCC or GND
• Built-in 32-byte page write buffer for faster data transfers
• Self-timed write cycle with auto-erase and auto-write features

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention even during power loss - Low power consumption makes it suitable for battery-powered devices - Wide operating voltage range allows compatibility with various systems - Small package size (SOIC) enables space-efficient designs - High endurance and long data retention period

Disadvantages: - Limited storage capacity (4 kilobytes) - Relatively slower write cycle compared to other memory technologies - Requires an I2C interface, which may not be available in all systems

Working Principles

The AT24C32N-10SI-2.7 operates based on the principles of electrically erasable programmable read-only memory (EEPROM). It uses a floating gate transistor structure to store and retrieve data. The memory cells can be electrically programmed and erased, allowing non-volatile data storage.

The IC communicates with the host system through the I2C serial interface. The host sends commands and addresses to access specific memory locations for reading or writing data. The AT24C32N-10SI-2.7 supports both byte-wise and page-wise write operations, providing flexibility in data storage.

Detailed Application Field Plans

The AT24C32N-10SI-2.7 finds applications in various electronic devices that require non-volatile data storage, such as:

1. Consumer Electronics: Used for storing configuration settings in TVs, set-top boxes, and audio/video equipment.
2. Industrial Control Systems: Used for storing calibration data, device parameters, and system configurations in industrial automation systems.
3. Automotive Electronics: Used for storing vehicle-specific data, such as mileage, service history, and user preferences.
4. Medical Devices: Used for storing patient data, device settings, and firmware updates in medical equipment.

Detailed and Complete Alternative Models

1. AT24C01A: 1 kilobit (128 bytes) EEPROM with similar features and interface.
2. AT24C64: 64 kilobits (8 kilobytes) EEPROM with higher storage capacity.
3. AT25010A: 1 kilobit (128 bytes) EEPROM with SPI (Serial Peripheral Interface) interface.
4. AT93C46A: 1 kilobit (128 bytes) EEPROM with Microwire interface.

These alternative models offer different memory sizes, interfaces, and features to suit specific application requirements.

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