AT24C256N-10SI-1.8

Product Overview

Category

AT24C256N-10SI-1.8 belongs to the category of EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electrically.
• High storage capacity: The AT24C256N-10SI-1.8 has a storage capacity of 256 kilobits (32 kilobytes).
• Low power consumption: It operates at a low voltage and consumes minimal power.
• High reliability: The EEPROM technology ensures reliable data retention and endurance.

Package

The AT24C256N-10SI-1.8 comes in an 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of this product lies in its ability to provide non-volatile memory storage that can be easily read from and written to by electronic devices.

Packaging/Quantity

The AT24C256N-10SI-1.8 is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Operating Voltage: 1.8V
• Maximum Clock Frequency: 1 MHz
• Write Cycle Time: 5 ms (maximum)
• Data Retention: 100 years (minimum)
• Endurance: 1 million write cycles (minimum)

Detailed Pin Configuration

The AT24C256N-10SI-1.8 has the following pin configuration:

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. GND: Ground
5. SDA: Serial Data Input/Output
6. SCL: Serial Clock Input
7. WP: Write Protect
8. VCC: Power Supply

Functional Features

• Random Access: Allows reading and writing of data at any memory location.
• Byte-Level Read/Write: Supports individual byte-level read and write operations.
• Page Write: Enables faster write operations by allowing multiple bytes to be written in a single operation.
• Write Protection: The WP pin can be used to protect the memory from accidental writes.
• I2C Interface: The AT24C256N-10SI-1.8 communicates using the I2C (Inter-Integrated Circuit) protocol.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Electrically erasable and reprogrammable, providing flexibility for data updates.
• High storage capacity allows for storing large amounts of data.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable data retention and endurance ensure long-term usability.

Disadvantages

• Slower write cycle time compared to other types of memory.
• Limited endurance with a maximum of 1 million write cycles.
• Requires an external microcontroller or interface to access and manipulate data.

Working Principles

The AT24C256N-10SI-1.8 utilizes EEPROM technology, which consists of floating-gate transistors that store charge to represent data. When data needs to be written, the charge is applied or removed from the floating gate, altering its electrical characteristics. Reading data involves sensing the electrical state of the floating gate to determine the stored information.

Detailed Application Field Plans

The AT24C256N-10SI-1.8 finds applications in various fields, including:

1. Embedded Systems: Used for storing configuration data, firmware updates, and user settings in microcontrollers and IoT devices.
2. Automotive Electronics: Employed for storing critical data such as mileage, vehicle settings, and error codes in automotive control units.
3. Industrial Automation: Utilized for storing calibration data, production parameters, and device configurations in industrial control systems.
4. Consumer Electronics: Integrated into devices like smart TVs, set-top boxes, and audio equipment to store user preferences and settings.

Detailed and Complete Alternative Models

1. AT24C01A: 1 kilobit (128 bytes) EEPROM chip with similar features but lower storage capacity.
2. AT24C512C: 512 kilobit (64 kilobytes) EEPROM chip with higher storage capacity.
3. AT24CM02: 2 megabit (256 kilobytes) EEPROM chip with extended temperature range.

These alternative models provide options with varying storage capacities and specifications to suit different application requirements.

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