24FC128T-I/SN

Product Overview

Category

The 24FC128T-I/SN belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electronically.
• High storage capacity: The 24FC128T-I/SN has a capacity of 128 kilobits (16 kilobytes).
• Low power consumption: It operates at low voltage levels, making it energy-efficient.
• High reliability: The EEPROM technology ensures reliable data retention and endurance.

Package

The 24FC128T-I/SN is available in a small outline integrated circuit (SOIC) package. This package provides a compact form factor suitable for space-constrained applications.

Essence

The essence of the 24FC128T-I/SN lies in its ability to store and retrieve data reliably in a non-volatile manner. It offers a convenient solution for storing critical information in electronic systems.

Packaging/Quantity

The product is typically supplied in tape and reel packaging, with a quantity of 2500 units per reel.

Specifications

• Memory Capacity: 128 kilobits (16 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million write cycles
• Data Retention: Up to 200 years

Detailed Pin Configuration

The 24FC128T-I/SN has a total of 8 pins, which are assigned specific functions:

1. VCC: Power supply voltage
2. SDA: Serial data input/output for I2C communication
3. SCL: Serial clock input for I2C communication
4. WP: Write protect pin (optional)
5. A0, A1, A2: Address selection pins for device addressing
6. GND: Ground

Functional Features

• Random access: Allows reading and writing of individual memory locations.
• Page write mode: Enables faster data writes by allowing multiple bytes to be written in a single operation.
• Software write protection: The WP pin can be used to protect the memory from accidental writes.
• Sequential read mode: Facilitates efficient retrieval of consecutive memory locations.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data remains intact even during power loss.
• High reliability: EEPROM technology ensures reliable data retention and endurance.
• Compact form factor: SOIC package enables space-efficient integration.
• Low power consumption: Operates at low voltage levels, reducing energy consumption.

Disadvantages

• Limited storage capacity: Although sufficient for many applications, larger storage requirements may necessitate alternative solutions.
• Slower write speed compared to other memory technologies.

Working Principles

The 24FC128T-I/SN utilizes EEPROM technology, which employs floating-gate transistors to store and retrieve data. When writing data, an electric charge is applied to the floating gate, altering its electrical characteristics. This change allows the transistor to represent either a "0" or a "1" bit. Reading data involves sensing the electrical state of each transistor and converting it back into binary information.

Detailed Application Field Plans

The 24FC128T-I/SN finds application in various fields, including: 1. Microcontrollers: Used for storing firmware, configuration data, and calibration parameters. 2. Embedded systems: Provides non-volatile storage for critical system data and settings. 3. Consumer electronics: Enables data storage in devices such as smart TVs, set-top boxes, and audio players.

Detailed and Complete Alternative Models

1. 24FC256-I/P: A higher-capacity EEPROM chip with 256 kilobits (32 kilobytes) of memory.
2. 24LC64-I/SN: A lower-capacity EEPROM chip with 64 kilobits (8 kilobytes) of memory.
3. 24AA02E48T-I/OT: An EEPROM chip with a smaller capacity of 2 kilobits (256 bytes), suitable for applications with limited storage requirements.

These alternative models offer different memory capacities to cater to diverse application needs.

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